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AUIRF7341QTR PDF预览

AUIRF7341QTR

更新时间： 2024-09-17 12:42:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
12页 227K
描述
Advanced Planar Technology Ultra Low On-Resistance

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中文翻译

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AUIRF7341QTR 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：ROHS COMPLIANT, SOP-8Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：0.7
Is Samacsys：N其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：140 mJ配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：5.1 A
最大漏极电流 (ID)：5.1 A最大漏源导通电阻：0.05 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MS-012AA
JESD-30 代码：R-PDSO-G8湿度敏感等级：1
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2.4 W
最大脉冲漏极电流 (IDM)：42 A子类别：FET General Purpose Power
表面贴装：YES端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF7341QTR 数据手册

 浏览型号AUIRF7341QTR的Datasheet PDF文件第2页浏览型号AUIRF7341QTR的Datasheet PDF文件第3页浏览型号AUIRF7341QTR的Datasheet PDF文件第4页浏览型号AUIRF7341QTR的Datasheet PDF文件第5页浏览型号AUIRF7341QTR的Datasheet PDF文件第6页浏览型号AUIRF7341QTR的Datasheet PDF文件第7页 
PD - 96362A  
AUTOMOTIVE MOSFET  
AUIRF7341Q  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
l
AdvancedPlanarTechnology  
V(BR)DSS  
55V  
0.043  
0.050  
1
8
7
D1  
D1  
S1  
UltraLowOn-Resistance  
Dual N Channel MOSFET  
SurfaceMount  
Available in Tape & Reel  
175°COperatingTemperature  
Automotive [Q101] Qualified  
Lead-Free,RoHSCompliant  
2
G1  
RDS(on) typ.  
Ω
Ω
3
6
5
S2  
D2  
D2  
max.  
4
G2  
ID  
5.1A  
Top View  
Description  
Specifically designed for Automotive applications, these  
HEXFET® Power MOSFET's in a Dual SO-8 package utilize  
the lastest processing techniques to achieve extremely low  
on-resistance per silicon area. Additional features of these  
AutomotivequalifiedHEXFETPowerMOSFET's area175°C  
junction operating temperature, fast switching speed and  
improvedrepetitiveavalancherating.Thesebenefitscombine  
to make this design an extremely efficient and reliable device  
for use in Automotive applications and a wide variety of other  
applications.  
SO-8  
G
Gate  
D
Drain  
S
Source  
The efficient SO-8 package provides enhanced thermal  
characteristicsanddualMOSFETdiecapabilitymakingitideal  
in a variety of power applications. This dual, surface mount  
SO-8candramaticallyreduceboardspaceandisalsoavailable  
in Tape & Reel.  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
V
Drain-Source Voltage  
55  
V
DS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
5.1  
I
I
I
@ TA = 25°C  
D
D
A
@ TA = 70°C  
4.2  
42  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
2.4  
D
W
Power Dissipation  
1.7  
D
Linear Derating Factor  
16  
mW/°C  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
Avalanche Current  
± 20  
V
GS  
EAS  
IAR  
140  
5.1  
mJ  
A
EAR  
Repetitive Avalanche Energy  
Operating Junction and  
See Fig. 16,17,14a, 14b  
mJ  
T
T
J
-55 to + 175  
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Max.  
Units  
RθJA  
Junction-to-Ambient  
62.5  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/22/11  
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中文翻译

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AUIRF7341QTR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF7341Q INFINEON

类似代替

 Advanced Planar Technology Ultra Low On-Resistance
IRF7341TRPBF INFINEON

类似代替

 HEXFET® Power MOSFET
IRF7341PBF INFINEON

类似代替

 HEXFET Power MOSFET

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