5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> AUIRF7341Q
AUIRF7341Q PDF预览

AUIRF7341Q

更新时间： 2024-11-09 12:42:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC局域网
页数 文件大小 规格书
12页 227K
描述
Advanced Planar Technology Ultra Low On-Resistance

阅读下载

中文翻译

获取价格

AUIRF7341Q 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.15Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：897722
Samacsys Pin Count：8Samacsys Part Category：Integrated Circuit
Samacsys Package Category：Small Outline PackagesSamacsys Footprint Name：8 Lead SOIC
Samacsys Released Date：2019-10-26 09:54:44Is Samacsys：N
其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：140 mJ
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (ID)：5.1 A最大漏源导通电阻：0.05 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MS-012AA
JESD-30 代码：R-PDSO-G8湿度敏感等级：1
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：42 A表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF7341Q 数据手册

 浏览型号AUIRF7341Q的Datasheet PDF文件第2页浏览型号AUIRF7341Q的Datasheet PDF文件第3页浏览型号AUIRF7341Q的Datasheet PDF文件第4页浏览型号AUIRF7341Q的Datasheet PDF文件第5页浏览型号AUIRF7341Q的Datasheet PDF文件第6页浏览型号AUIRF7341Q的Datasheet PDF文件第7页 
PD - 96362A  
AUTOMOTIVE MOSFET  
AUIRF7341Q  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
l
AdvancedPlanarTechnology  
V(BR)DSS  
55V  
0.043  
0.050  
1
8
7
D1  
D1  
S1  
UltraLowOn-Resistance  
Dual N Channel MOSFET  
SurfaceMount  
Available in Tape & Reel  
175°COperatingTemperature  
Automotive [Q101] Qualified  
Lead-Free,RoHSCompliant  
2
G1  
RDS(on) typ.  
Ω
Ω
3
6
5
S2  
D2  
D2  
max.  
4
G2  
ID  
5.1A  
Top View  
Description  
Specifically designed for Automotive applications, these  
HEXFET® Power MOSFET's in a Dual SO-8 package utilize  
the lastest processing techniques to achieve extremely low  
on-resistance per silicon area. Additional features of these  
AutomotivequalifiedHEXFETPowerMOSFET's area175°C  
junction operating temperature, fast switching speed and  
improvedrepetitiveavalancherating.Thesebenefitscombine  
to make this design an extremely efficient and reliable device  
for use in Automotive applications and a wide variety of other  
applications.  
SO-8  
G
Gate  
D
Drain  
S
Source  
The efficient SO-8 package provides enhanced thermal  
characteristicsanddualMOSFETdiecapabilitymakingitideal  
in a variety of power applications. This dual, surface mount  
SO-8candramaticallyreduceboardspaceandisalsoavailable  
in Tape & Reel.  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
V
Drain-Source Voltage  
55  
V
DS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
5.1  
I
I
I
@ TA = 25°C  
D
D
A
@ TA = 70°C  
4.2  
42  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
2.4  
D
W
Power Dissipation  
1.7  
D
Linear Derating Factor  
16  
mW/°C  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
Avalanche Current  
± 20  
V
GS  
EAS  
IAR  
140  
5.1  
mJ  
A
EAR  
Repetitive Avalanche Energy  
Operating Junction and  
See Fig. 16,17,14a, 14b  
mJ  
T
T
J
-55 to + 175  
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Max.  
Units  
RθJA  
Junction-to-Ambient  
62.5  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/22/11  
1234567...12

中文翻译

下载PDF

AUIRF7341Q 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF7341QTR INFINEON

类似代替

 Advanced Planar Technology Ultra Low On-Resistance
IRF7341TRPBF INFINEON

类似代替

 HEXFET® Power MOSFET
IRF7341PBF INFINEON

类似代替

 HEXFET Power MOSFET

与AUIRF7341Q相关器件

型号 品牌 获取价格 描述 数据表
AUIRF7341QTR INFINEON

获取价格

 		Advanced Planar Technology Ultra Low On-Resistance
AUIRF7342Q INFINEON

获取价格

 		Advanced Planar Technology Low On-Resistance
AUIRF7342QTR INFINEON

获取价格

 		Advanced Planar Technology Low On-Resistance
AUIRF7343Q INFINEON

获取价格

 		Advanced Planar Technology Ultra Low On-Resistance
AUIRF7343QTR INFINEON

获取价格

 		Advanced Planar Technology Ultra Low On-Resistance
AUIRF7379Q INFINEON

获取价格

 		Advanced Planar Technology Low On-Resistance
AUIRF7379QTR INFINEON

获取价格

 		Advanced Planar Technology Low On-Resistance
AUIRF7416Q INFINEON

获取价格

 		Advanced Process Technology Low On-Resistance
AUIRF7416QTR INFINEON

获取价格

 		Advanced Process Technology Low On-Resistance
AUIRF7478Q INFINEON

获取价格

 		AUTOMOTIVE GRADE

与AUIRF7341Q相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证