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AUIRF7343Q PDF预览

AUIRF7343Q

更新时间： 2024-09-28 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
13页 230K
描述
Advanced Planar Technology Ultra Low On-Resistance

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中文翻译

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AUIRF7343Q 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.21Is Samacsys：N
其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：72 mJ
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (ID)：4.7 A最大漏源导通电阻：0.05 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MS-012AA
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM)：38 A
认证状态：Not Qualified表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF7343Q 数据手册

 浏览型号AUIRF7343Q的Datasheet PDF文件第2页浏览型号AUIRF7343Q的Datasheet PDF文件第3页浏览型号AUIRF7343Q的Datasheet PDF文件第4页浏览型号AUIRF7343Q的Datasheet PDF文件第5页浏览型号AUIRF7343Q的Datasheet PDF文件第6页浏览型号AUIRF7343Q的Datasheet PDF文件第7页 
PD - 96343B  
AUTOMOTIVE MOSFET  
AUIRF7343Q  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
l
AdvancedPlanarTechnology  
N-Ch  
55V  
P-Ch  
-55V  
N-CHANNEL MOSFET  
1
2
3
4
8
UltraLowOn-Resistance  
Dual N and P Channel MOSFET  
SurfaceMount  
Available in Tape & Reel  
150°COperatingTemperature  
Automotive [Q101] Qualified*  
Lead-Free,RoHSCompliant  
D1  
D1  
S1  
G1  
V(BR)DSS  
7
6
5
S2  
G2  
D2  
D2  
RDS(on) typ.  
0.043 0.095  
Ω
Ω
P-CHANNEL MOSFET  
max.  
0.050 0.105  
Ω
Ω
Top View  
ID  
4.7A  
-3.4A  
Description  
Specifically designed for Automotive applications, these  
HEXFET® Power MOSFET's in a Dual SO-8 package utilize  
the lastest processing techniques to achieve extremely low  
on-resistance per silicon area. Additional features of these  
AutomotivequalifiedHEXFETPowerMOSFET's area150°C  
junction operating temperature, fast switching speed and  
improvedrepetitiveavalancherating.Thesebenefitscombine  
to make this design an extremely efficient and reliable device  
for use in Automotive applications and a wide variety of other  
applications.  
SO-8  
The efficient SO-8 package provides enhanced thermal  
characteristicsanddualMOSFETdiecapabilitymakingitideal  
in a variety of power applications. This dual, surface mount  
SO-8candramaticallyreduceboardspaceandisalsoavailable  
in Tape & Reel.  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Units  
Parameter  
N-Channel  
P-Channel  
V
Drain-Source Voltage  
55  
4.7  
3.8  
38  
-55  
-3.4  
-2.7  
-27  
V
A
DS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
DM  
2.0  
1.3  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
D
D
W
Power Dissipation  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
72  
114  
-3.4  
mJ  
A
4.7  
EAR  
0.20  
± 20  
Repetitive Avalanche Energy  
Gate-to-Source Voltage  
mJ  
V
V
GS  
dv/dt  
5.0  
-5.0  
V/ns  
Peak Diode Recovery dv/dt  
Operating Junction and  
T
T
J
-55 to + 150  
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Junction-to-Ambient  
–––  
62.5  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
09/22/11  
1234567...13

中文翻译

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AUIRF7343Q 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF7343QTR INFINEON

完全替代

 Advanced Planar Technology Ultra Low On-Resistance
FDS4559-F085 ONSEMI

功能相似

 60V 互补 PowerTrench® MOSFET
FDS4559_NL FAIRCHILD

功能相似

 Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channe

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