5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> AUIRF7342QTR
AUIRF7342QTR PDF预览

AUIRF7342QTR

更新时间： 2024-11-25 12:30:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
11页 177K
描述
Advanced Planar Technology Low On-Resistance

阅读下载

中文翻译

获取价格

AUIRF7342QTR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：8 weeks
风险等级：0.75其他特性：AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级（Eas）：114 mJ配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：3.4 A
最大漏极电流 (ID)：3.4 A最大漏源导通电阻：0.105 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MS-012AA
JESD-30 代码：R-PDSO-G8湿度敏感等级：1
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：2 W
最大脉冲漏极电流 (IDM)：27 A子类别：Other Transistors
表面贴装：YES端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF7342QTR 数据手册

 浏览型号AUIRF7342QTR的Datasheet PDF文件第2页浏览型号AUIRF7342QTR的Datasheet PDF文件第3页浏览型号AUIRF7342QTR的Datasheet PDF文件第4页浏览型号AUIRF7342QTR的Datasheet PDF文件第5页浏览型号AUIRF7342QTR的Datasheet PDF文件第6页浏览型号AUIRF7342QTR的Datasheet PDF文件第7页 
PD - 97640  
AUTOMOTIVE GRADE  
AUIRF7342Q  
●
●
●
●
●
●
●
●
●
Advanced Planar Technology  
Low On-Resistance  
Dual P-Channel MOSFET  
Dynamic dV/dT Rating  
150°C Operating Temperature  
Fast Switching  
Fully Avalanche Rated  
Lead-Free, RoHS Compliant  
Automotive Qualified*  
HEXFET® Power MOSFET  
1
2
3
4
8
D1  
D1  
S1  
V(BR)DSS  
-55V  
0.105Ω  
-3.4A  
7
G1  
6
5
S2  
D2  
D2  
RDS(on) max.  
ID  
G2  
Top View  
Description  
Specifically designed for Automotive applications, this  
cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-resis-  
tancepersiliconarea. Thisbenefitcombinedwiththefast  
switching speed and ruggedized device design that  
HEXFET power MOSFETs are well known for, provides  
the designer with an extremely efficient and reliable  
device for use in Automotive and a wide variety of other  
applications.  
SO-8  
AUIRF7342Q  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;  
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to  
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings  
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
-55  
Units  
V
V
Drain-Source Voltage  
DS  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
-3.4  
-2.7  
-27  
I
I
I
@ TA = 25°C  
D
D
A
@ TA = 70°C  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
2.0  
D
D
W
Power Dissipation  
1.3  
0.016  
± 20  
Linear Derating Factor  
Gate-to-Source Voltage  
mW/°C  
V
V
V
GS  
Gate-to-Source Voltage Single Pulse tp<10μs  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
30  
114  
5.0  
V
GSM  
EAS  
mJ  
dv/dt  
V/ns  
T
T
Operating Junction and  
J
-55 to + 150  
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Max.  
Units  
Rθ  
JA  
Junction-to-Ambient  
62.5  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
02/25/2011  
1234567...11

中文翻译

下载PDF

AUIRF7342QTR 替代型号

型号 品牌 替代类型 描述 数据表
IRF7342TRPBF INFINEON

类似代替

 Generation V Technology
AUIRF7342Q INFINEON

类似代替

 Advanced Planar Technology Low On-Resistance
IRF7342PBF INFINEON

类似代替

 HEXFET㈢ Power MOSFET (VDSS = -55V , RDS(on) =

与AUIRF7342QTR相关器件

型号 品牌 获取价格 描述 数据表
AUIRF7343Q INFINEON

获取价格

 		Advanced Planar Technology Ultra Low On-Resistance
AUIRF7343QTR INFINEON

获取价格

 		Advanced Planar Technology Ultra Low On-Resistance
AUIRF7379Q INFINEON

获取价格

 		Advanced Planar Technology Low On-Resistance
AUIRF7379QTR INFINEON

获取价格

 		Advanced Planar Technology Low On-Resistance
AUIRF7416Q INFINEON

获取价格

 		Advanced Process Technology Low On-Resistance
AUIRF7416QTR INFINEON

获取价格

 		Advanced Process Technology Low On-Resistance
AUIRF7478Q INFINEON

获取价格

 		AUTOMOTIVE GRADE
AUIRF7478QTR INFINEON

获取价格

 		AUTOMOTIVE GRADE
AUIRF7484Q INFINEON

获取价格

 		汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 SO
AUIRF7484QTR INFINEON

获取价格

 		Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

与AUIRF7342QTR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证