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AUIRF7319Q

更新时间： 2024-11-07 12:29:43
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英飞凌 - INFINEON /
页数 文件大小 规格书
13页 261K
描述
HEXFET® Power MOSFET

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AUIRF7319Q 数据手册

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PD - 96364B  
AUTOMOTIVE MOSFET  
AUIRF7319Q  
HEXFET® Power MOSFET  
Features  
N-Ch  
30V  
P-Ch  
-30V  
N-CHANNEL MOSFET  
l
l
l
l
l
l
l
AdvancedPlanarTechnology  
1
2
3
4
8
D1  
D1  
S1  
G1  
LowOn-Resistance  
Dual N and P Channel MOSFET  
SurfaceMount  
Fully Avalanche Rated  
Automotive [Q101] Qualified*  
Lead-Free,RoHSCompliant  
V(BR)DSS  
7
6
5
S2  
G2  
D2  
D2  
RDS(on) typ.  
0.023 0.042  
Ω
Ω
P-CHANNEL MOSFET  
max.  
0.029 0.058  
Ω
Ω
Top View  
ID  
6.5A  
-4.9A  
Description  
Specifically designed for Automotive applications, these  
HEXFET® Power MOSFET's in a Dual SO-8 package utilize  
the lastest processing techniques to achieve extremely low  
on-resistance per silicon area. Additional features of these  
AutomotivequalifiedHEXFETPowerMOSFET's area150°C  
junction operating temperature, fast switching speed and  
improvedrepetitiveavalancherating.Thesebenefitscombine  
to make this design an extremely efficient and reliable device  
for use in Automotive applications and a wide variety of other  
applications.  
SO-8  
The efficient SO-8 package provides enhanced thermal  
characteristicsanddualMOSFETdiecapabilitymakingitideal  
in a variety of power applications. This dual, surface mount  
SO-8candramaticallyreduceboardspaceandisalsoavailable  
in Tape & Reel.  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Units  
Parameter  
N-Channel  
P-Channel  
Drain-Source Voltage  
30  
6.5  
5.2  
30  
-30  
-4.9  
-3.9  
-30  
V
V
DS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
A
DM  
S
Continuous Source Current( diode Conduction)  
Power Dissipation  
2.5  
-2.5  
2.0  
1.3  
P
P
@TA = 25°C  
@TA = 70°C  
D
W
Power Dissipation  
D
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
82  
140  
-2.8  
mJ  
A
4.0  
EAR  
0.20  
± 20  
Repetitive Avalanche Energy  
Gate-to-Source Voltage  
mJ  
V
V
GS  
dv/dt  
5.0  
-5.0  
V/ns  
Peak Diode Recovery dv/dt  
Operating Junction and  
T
T
J
-55 to + 150  
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Junction-to-Ambient  
–––  
62.5  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/24/11  
1234567...13

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AUIRF7319Q 替代型号

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AUIRF7319QTR INFINEON

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