PD - 96364B
AUTOMOTIVE MOSFET
AUIRF7319Q
HEXFET® Power MOSFET
Features
N-Ch
30V
P-Ch
-30V
N-CHANNEL MOSFET
l
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AdvancedPlanarTechnology
1
2
3
4
8
D1
D1
S1
G1
LowOn-Resistance
Dual N and P Channel MOSFET
SurfaceMount
Fully Avalanche Rated
Automotive [Q101] Qualified*
Lead-Free,RoHSCompliant
V(BR)DSS
7
6
5
S2
G2
D2
D2
RDS(on) typ.
0.023 0.042
Ω
Ω
P-CHANNEL MOSFET
max.
0.029 0.058
Ω
Ω
Top View
ID
6.5A
-4.9A
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
AutomotivequalifiedHEXFETPowerMOSFET's area150°C
junction operating temperature, fast switching speed and
improvedrepetitiveavalancherating.Thesebenefitscombine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
SO-8
The efficient SO-8 package provides enhanced thermal
characteristicsanddualMOSFETdiecapabilitymakingitideal
in a variety of power applications. This dual, surface mount
SO-8candramaticallyreduceboardspaceandisalsoavailable
in Tape & Reel.
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Units
Parameter
N-Channel
P-Channel
Drain-Source Voltage
30
6.5
5.2
30
-30
-4.9
-3.9
-30
V
V
DS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
A
DM
S
Continuous Source Current( diode Conduction)
Power Dissipation
2.5
-2.5
2.0
1.3
P
P
@TA = 25°C
@TA = 70°C
D
W
Power Dissipation
D
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
82
140
-2.8
mJ
A
4.0
EAR
0.20
± 20
Repetitive Avalanche Energy
Gate-to-Source Voltage
mJ
V
V
GS
dv/dt
5.0
-5.0
V/ns
Peak Diode Recovery dv/dt
Operating Junction and
T
T
J
-55 to + 150
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
–––
62.5
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/24/11