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AUIRF7309Q

更新时间： 2024-09-17 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲光电二极管
页数 文件大小 规格书
14页 293K
描述
Advanced Planar Technology Low On-Resistance

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中文翻译

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AUIRF7309Q 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
Is Samacsys：N其他特性：HIGH RELIABILITY
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：4 A最大漏源导通电阻：0.05 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MS-012AA
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM)：16 A
认证状态：Not Qualified表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF7309Q 数据手册

 浏览型号AUIRF7309Q的Datasheet PDF文件第2页浏览型号AUIRF7309Q的Datasheet PDF文件第3页浏览型号AUIRF7309Q的Datasheet PDF文件第4页浏览型号AUIRF7309Q的Datasheet PDF文件第5页浏览型号AUIRF7309Q的Datasheet PDF文件第6页浏览型号AUIRF7309Q的Datasheet PDF文件第7页 
PD - 97655A  
AUTOMOTIVE GRADE  
AUIRF7309Q  
Features  
l AdvancedPlanarTechnology  
l LowOn-Resistance  
l Dual N and P Channel MOSFET  
l Dynamic dV/dT Rating  
l 150°COperatingTemperature  
l Fast Switching  
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
HEXFET® Power MOSFET  
N-CHANNEL MOSFET  
N-CH P-CH  
1
8
D1  
D1  
S1  
2
7
G1  
V(BR)DSS  
RDS(on) max.  
ID  
30V  
0.05  
-30V  
0.10  
3
4
6
5
S2  
D2  
D2  
Ω
Ω
G2  
P-CHANNEL MOSFET  
4.7A -3.5A  
Top View  
Description  
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit com-  
bined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
known for, provides the designer with an extremely  
efficient and reliable device for use in Automotive and  
a wide variety of other applications.  
SO-8  
AUIRF7309Q  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings  
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure  
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings  
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Parameter  
Units  
N-Channel  
P-Channel  
10 Sec. Pulsed Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
4.7  
-3.5  
I @ TA = 25°C  
D
4
-3.0  
-2.4  
-12  
I @ TA = 25°C  
D
A
3.2  
16  
I @ TA = 70°C  
D
I
DM  
1.4  
W
W/°C  
V
P @TA = 25°C  
Power Dissipation  
D
0.011  
± 20  
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
dv/dt  
6.9  
-6.0  
V/ns  
Peak Diode Recovery dv/dt  
Operating Junction and  
T
T
J
-55 to + 150  
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Junction-to-Ambient (PCB Mount, steady state)  
90  
°C/W  
–––  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/23/11  
1234567...14

中文翻译

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AUIRF7309Q 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF7309QTR INFINEON

类似代替

 Advanced Planar Technology Low On-Resistance
IRF7309TRPBF INFINEON

类似代替

 GENERATION V TECHNOLOGY
IRF7309PBF INFINEON

类似代替

 HEXFET Power MOSFET

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