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AUIRF7304Q PDF预览

AUIRF7304Q

更新时间： 2024-11-25 12:30:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 222K
描述
Advanced Planar Technology Low On-Resistance

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中文翻译

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AUIRF7304Q 数据手册

 浏览型号AUIRF7304Q的Datasheet PDF文件第2页浏览型号AUIRF7304Q的Datasheet PDF文件第3页浏览型号AUIRF7304Q的Datasheet PDF文件第4页浏览型号AUIRF7304Q的Datasheet PDF文件第5页浏览型号AUIRF7304Q的Datasheet PDF文件第6页浏览型号AUIRF7304Q的Datasheet PDF文件第7页 
PD - 97653A  
AUTOMOTIVE GRADE  
AUIRF7304Q  
HEXFET® Power MOSFET  
Features  
l AdvancedPlanarTechnology  
l LowOn-Resistance  
l Dual P Channel MOSFET  
l Dynamic dV/dT Rating  
l Logic Level  
l 150°COperatingTemperature  
l Fast Switching  
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
1
2
3
4
8
7
S1  
G1  
D1  
D1  
V(BR)DSS  
DS(on) max.  
ID  
-20V  
0.090Ω  
-4.3A  
6
5
S2  
D2  
D2  
R
G2  
Top View  
Description  
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit com-  
bined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are  
well known for, provides the designer with an ex-  
tremely efficient and reliable device for use in Auto-  
motive and a wide variety of other applications.  
SO-8  
AUIRF7304Q  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
10 Sec. Pulsed Drain Current, VGS @ -4.5V  
Max.  
-4.7  
-4.3  
-3.4  
-17  
Units  
I
I
I
I
@ TA = 25°C  
@ TA = 25°C  
@ TA = 70°C  
D
D
D
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current  
A
DM  
Power Dissipation  
P
@TA = 25°C  
2.0  
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
0.016  
± 12  
W/°C  
V
VGS  
dv/dt  
Peak Diode Recovery dv/dt  
Operating Junction and  
-5.0  
-55 to + 150  
V/ns  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
62.5  
Units  
°C/W  
RθJA  
Junction-to-Ambient  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/23/11  
1234567...12

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AUIRF7304Q 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF7304QTR INFINEON

类似代替

 Advanced Planar Technology Low On-Resistance
IRF7304QPBF INFINEON

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 HEXFET Power MOSFET

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