AUIRF7303Q

更新时间： 2024-11-07 12:42:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
10页	228K
描述
Advanced Planar Technology Dual N Channel MOSFET

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中文翻译

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AUIRF7303Q 数据手册

PD - 97654C

AUTOMOTIVE GRADE

AUIRF7303Q

HEXFET^®Power MOSFET

Features

l AdvancedPlanarTechnology

l Dual N Channel MOSFET

l LowOn-Resistance

l Dynamic dV/dT Rating

l 175°COperatingTemperature

l Fast Switching

V_(BR)DSS

30V

R_DS(on)max.

I_D

0.05

l Lead-Free,RoHSCompliant

l AutomotiveQualified*

5.3A

Top View

Description

SpecificallydesignedforAutomotiveapplications,thiscellular

design of HEXFET® Power MOSFETs utilizes the latest

processing techniques to achieve low on-resistance per

silicon area. This benefit combined with the fast switching

speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in Automotive

and a wide variety of other applications.

SO-8

AUIRF7303Q

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

5.3

4.4

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

P_D@T_A= 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

2.4

W/°C

0.02

± 20

414

1160

1.6

V_GS

E_AS

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

°C

E_AS(Tested)

dv/dt

T_J

-55 to + 175

T_STG

Storage Temperature Range

Thermal Resistance

Parameter

Max.

Units

R_θ

Junction-to-Ambient

62.5

°C/W

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

08/24/11

12 3 4 5 6 7...10

中文翻译

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AUIRF7303Q 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF7303QTR	INFINEON	完全替代	Advanced Planar Technology Dual N Channel MOSFET
IRF7303PBF	INFINEON	类似代替	HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0
IRF7303QPBF	INFINEON	功能相似	HEXFET Power MOSFET

与AUIRF7303Q相关器件

型号	品牌	获取价格	描述	数据表
AUIRF7303QTR	INFINEON	获取价格	Advanced Planar Technology Dual N Channel MOSFET
AUIRF7304Q	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRF7304QTR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRF7309Q	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRF7309QTR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRF7313Q	INFINEON	获取价格	Advanced Planar Technology Dual N Channel MOSFET
AUIRF7313QTR	INFINEON	获取价格	Advanced Planar Technology Dual N Channel MOSFET
AUIRF7316Q	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRF7316QTR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRF7319Q	INFINEON	获取价格	HEXFETÂ® Power MOSFET

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