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IRF7303PBF

更新时间： 2024-10-30 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 231K
描述
HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050ヘ )

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中文翻译

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IRF7303PBF 数据手册

 浏览型号IRF7303PBF的Datasheet PDF文件第2页浏览型号IRF7303PBF的Datasheet PDF文件第3页浏览型号IRF7303PBF的Datasheet PDF文件第4页浏览型号IRF7303PBF的Datasheet PDF文件第5页浏览型号IRF7303PBF的Datasheet PDF文件第6页浏览型号IRF7303PBF的Datasheet PDF文件第7页 
PD - 95177  
IRF7303PbF  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l Dual N-Channel Mosfet  
l Surface Mount  
1
2
8
S1  
G1  
D1  
VDSS = 30V  
7
D1  
l Available in Tape & Reel  
l Dynamic dv/dt Rating  
l Fast Switching  
3
4
6
S2  
G2  
D2  
5
D2  
RDS(on) = 0.050Ω  
l Lead-Free  
Top View  
Description  
Fifth GenerationHEXFETsfromInternationalRectifier  
utilize advanced processing techniques to achieve  
the lowest possible on-resistance per silicon area.  
This benefit, combined with the fast switching speed  
and ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient device for use in a wide  
variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
power applications. With these improvements,  
multiple devices can be used in an application with  
dramatically reduced board space. The package is  
designed for vapor phase, infra red, or wave soldering  
techniques. Power dissipation of greater than 0.8W  
is possible in a typical PCB mount application.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
10 Sec. Pulsed Drain Current, VGS @ 10V  
5.3  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
4.9  
A
3.9  
20  
PD @TA = 25°C  
Power Dissipation  
2.0  
W
W/°C  
V
Linear Derating Factor  
0.016  
± 20  
VGS  
Gate-to-Source Voltage  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
5.0  
V/ns  
°C  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambient„  
–––  
62.5  
°C/W  
10/6/04  
1234567...9

中文翻译

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IRF7303PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7306TRPBF INFINEON

类似代替

 Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-
IRF7303TRPBF INFINEON

类似代替

 Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Met
IRF7416TRPBF INFINEON

类似代替

 HEXFET® Power MOSFET

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IRF7303TRPBF INFINEON

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 		Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Met
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IRF7304PBF INFINEON

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IRF7304PBF_10 INFINEON

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