Datasheet > IRF7307TR

IRF7307TR

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	489K
描述
种类:N+P-Channel;漏源电压（Vdss）:N: 20V，P：-20V;持续漏极电流（Id）（在25°C时）:N: 4.7A，P：-5.7A;Vgs(th)(V):±12;漏源导通电阻:N:53 ，P：100mΩ@4.5V

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数据手册

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IRF7307TR 数据手册

UMW

IRF7307

Features

N-Ch：

N-CHANNEL MOSFET

VDS (V) = 20V

53m

70m

(VGS

4.5V)

2.7V)

RDS(ON)

P-Ch：

VDS (V) = 20V

(VGS

4.5V)

2.7V)

100

RDS(ON)

140

P-CHANNEL MOSFET

Generation V Technology Ultra

Low On-Resistance

SOP-8

Dual N and P Channel Mosfet

Surface Mount

Dynamic dv/dt Rating

Fast Switching

Lead-Free

Description

The so-8 has been modified through a customized

leadtrame for enhanced thermal characteristics and

multiple die capability making it ideal in a varietyof power

applications. Withtheseimprovements. multiple devices can

be used in an application with dramatically reduced board

space. The package is designed for vapor phase. infra red.

or wave soldering technigues. Power dissipation of greater

than 0.8W is possible in a typical PCB mount application.

Absolute Maximum Ratings

Max.

Parameter

Units

N-Channel

P-Channel

4.5V

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10 Sec. Pulse Drain Current, V_GS

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

5.7-4.7

5.2

-4.3

4.1

-3.4

-17

P_D@T_A= 25°C

Power Dissipation

2.0

0.016

± 12

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

-5.0

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

62.5

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

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