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IRF7306TR PDF预览

IRF7306TR

更新时间： 2024-09-30 20:04:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 111K
描述
Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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IRF7306TR 数据手册

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PD - 9.1241C  
IRF7306  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l Dual P-Channel Mosfet  
l Surface Mount  
l Available in Tape & Reel  
l Dynamic dv/dt Rating  
l Fast Switching  
1
2
8
S1  
G1  
D1  
VDSS = -30V  
7
D1  
3
4
6
S2  
G2  
D2  
5
R
DS(on) = 0.10Ω  
D2  
To p Vie w  
Description  
FifthGenerationHEXFETsfromInternationalRectifier  
utilize advanced processing techniques to achieve the  
lowest possible on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient device for use in a wide  
variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devicescanbeusedinanapplicationwithdramatically  
reduced board space. The package is designed for  
vapor phase, infra red, or wave soldering techniques.  
Power dissipation of greater than 0.8W is possible in  
a typical PCB mount application.  
SO-8  
Absolute Maximum Ratings  
Parameter  
10 Sec. Pulsed Drain Current, VGS @ -10V  
Max.  
-4.0  
-3.6  
-2.9  
-14  
Units  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current   
A
PD @TA = 25°C  
Power Dissipation  
2.0  
W
W/°C  
V
Linear Derating Factor  
0.016  
±20  
-5.0  
VGS  
Gate-to-Source Voltage  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
V/ns  
°C  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambient„  
–––  
62.5  
°C/W  
8/25/97  
1234567...9

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IRF7306TR 替代型号

型号 品牌 替代类型 描述 数据表
IRF7306TRPBF INFINEON

类似代替

 Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-
IRF7306PBF INFINEON

类似代替

 HEXFET㈢Power MOSFET
IRF7306 INFINEON

类似代替

 HEXFET Power MOSFET

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