5秒后页面跳转
IRF730APBF PDF预览

IRF730APBF

更新时间: 2024-11-20 05:39:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 168K
描述
Power MOSFET

IRF730APBF 数据手册

 浏览型号IRF730APBF的Datasheet PDF文件第2页浏览型号IRF730APBF的Datasheet PDF文件第3页浏览型号IRF730APBF的Datasheet PDF文件第4页浏览型号IRF730APBF的Datasheet PDF文件第5页浏览型号IRF730APBF的Datasheet PDF文件第6页浏览型号IRF730APBF的Datasheet PDF文件第7页 
IRF730A, SiHF730A  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Low Gate Charge Qg results in Simple Drive  
Requirement  
PRODUCT SUMMARY  
VDS (V)  
400  
Available  
RDS(on) (Ω)  
VGS = 10 V  
5.5  
• Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
RoHS*  
COMPLIANT  
Qg (Max.) (nC)  
22  
5.8  
Q
Q
gs (nC)  
gd (nC)  
• Fully  
Characterized  
Capacitance  
and  
Avalanche Voltage and Current  
• Effective Coss Specified (See AN1001)  
• Lead (Pb)-free Available  
9.3  
Configuration  
Single  
D
TO-220  
APPLICATIONS  
• Switch Mode Power Supply (SMPS)  
• Uninterruptible Power Supply  
• High Speed Power Switching  
G
S
TYPICAL SMPS TOPOLOGIES  
• Single Transistor Flyback Xfmr. Reset  
D
S
N-Channel MOSFET  
G
• Single Transistor Forward Xfmr. Reset  
(Both US Line Input Only)  
ORDERING INFORMATION  
Package  
TO-220  
IRF730APbF  
SiHF730A-E3  
IRF730A  
Lead (Pb)-free  
SnPb  
SiHF730A  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Gate-Source Voltage  
VGS  
30  
V
T
C = 25 °C  
5.5  
Continuous Drain Current  
VGS at 10 V  
ID  
A
TC =100°C  
3.5  
Pulsed Drain Currenta  
IDM  
22  
Linear Derating Factor  
0.6  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
290  
5.5  
EAR  
7.4  
mJ  
W
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc  
T
C = 25 °C  
PD  
74  
4.6  
dV/dt  
TJ, Tstg  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
6-32 or M3 screw  
10  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 19 mH, RG = 25 Ω, IAS = 5.5 A (see fig. 12).  
c. ISD 5.5 A, dI/dt 90 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91045  
S-Pending-Rev. A, 19-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

IRF730APBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF740APBF VISHAY

类似代替

Power MOSFET
FQPF9N50CF FAIRCHILD

功能相似

500V N-Channel MOSFET
STP7NK40Z STMICROELECTRONICS

功能相似

N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/D

与IRF730APBF相关器件

型号 品牌 获取价格 描述 数据表
IRF730AS VISHAY

获取价格

Power MOSFET
IRF730AS INFINEON

获取价格

SMPS MOSFET
IRF730AS, SiHF730AS, IRF730AL, SiHF730AL VISHAY

获取价格

Power MOSFET
IRF730AS/LPBF INFINEON

获取价格

HEXFET Power MOSFET (SMPS MOSFET)
IRF730ASL INFINEON

获取价格

SMPS MOSFET
IRF730ASLPBF INFINEON

获取价格

HEXFET Power MOSFET (SMPS MOSFET)
IRF730ASPBF INFINEON

获取价格

HEXFET Power MOSFET (SMPS MOSFET)
IRF730ASPBF VISHAY

获取价格

Power MOSFET
IRF730ASTR NJSEMI

获取价格

Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) D2PAK T/R
IRF730ASTRL VISHAY

获取价格

Power MOSFET