5秒后页面跳转
IRF730AS, SiHF730AS, IRF730AL, SiHF730AL PDF预览

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL

更新时间: 2024-11-08 14:53:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 229K
描述
Power MOSFET

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL 数据手册

 浏览型号IRF730AS, SiHF730AS, IRF730AL, SiHF730AL的Datasheet PDF文件第2页浏览型号IRF730AS, SiHF730AS, IRF730AL, SiHF730AL的Datasheet PDF文件第3页浏览型号IRF730AS, SiHF730AS, IRF730AL, SiHF730AL的Datasheet PDF文件第4页浏览型号IRF730AS, SiHF730AS, IRF730AL, SiHF730AL的Datasheet PDF文件第5页浏览型号IRF730AS, SiHF730AS, IRF730AL, SiHF730AL的Datasheet PDF文件第6页浏览型号IRF730AS, SiHF730AS, IRF730AL, SiHF730AL的Datasheet PDF文件第7页 
IRF730AS, SiHF730AS, IRF730AL, SiHF730AL  
www.vishay.com  
Vishay Siliconix  
Power MOSFET  
D
FEATURES  
D2PAK (TO-263)  
I2PAK (TO-262)  
• Low gate charge Qg results in simple drive  
requirement  
Available  
• Improved gate, avalanche and dynamic dV/dt  
ruggedness  
G
G
D
S
D
S
Available  
• Fully  
characterized  
capacitance  
and  
G
avalanche voltage and current  
• Effective Coss specified  
S
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
N-Channel MOSFET  
Note  
PRODUCT SUMMARY  
VDS (V)  
*
This datasheet provides information about parts that are  
RoHS-compliant and / or parts that are non RoHS-compliant. For  
example, parts with lead (Pb) terminations are not RoHS-compliant.  
Please see the information / tables in this datasheet for details  
400  
1.0  
RDS(on) max. (Ω)  
VGS = 10 V  
Qg max. (nC)  
22  
APPLICATIONS  
Q
gs (nC)  
gd (nC)  
5.8  
Q
9.3  
• Switch mode power supply (SMPS)  
• Uninterruptible power supply  
• High speed power switching  
Configuration  
Single  
TYPICAL SMPS TOPOLOGIES  
• Single transistor flyback Xfmr. reset  
• Single transistor forward Xfmr. reset (both US line input  
only)  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
D2PAK (TO-263)  
D2PAK (TO-263)  
I2PAK (TO-262)  
Lead (Pb)-free and halogen-free  
Lead (Pb)-free  
SiHF730AS-GE3  
IRF730ASPbF  
SiHF730ASTRL-GE3 a  
IRF730ASTRLPbF a  
SiHF730ASTRR-GE3 a  
SiHF730AL-GE3  
-
-
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
400  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
30  
T
C = 25 °C  
5.5  
Continuous drain current  
VGS at 10 V  
ID  
TC = 100 °C  
3.5  
A
Pulsed drain current a, e  
IDM  
22  
Linear derating factor  
0.6  
W/°C  
mJ  
A
Single pulse avalanche energy b, e  
Avalanche current a  
EAS  
IAR  
290  
5.5  
Repetiitive avalanche energy a  
EAR  
7.4  
mJ  
W
Maximum power dissipation  
T
C = 25 °C  
for 10 s  
PD  
74  
Peak diode recovery dV/dt c, e  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d  
dV/dt  
TJ, Tstg  
4.6  
V/ns  
-55 to +150  
300  
°C  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)  
b. Starting TJ = 25 °C, L = 19 mH, Rg = 25 Ω, IAS = 5.5 A (see fig. 12)  
c. ISD 5.5 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C  
d. 1.6 mm from case  
e. Uses IRF730A, SiHF730A data and test conditions  
S21-0901-Rev. D, 30-Aug-2021  
Document Number: 91046  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与IRF730AS, SiHF730AS, IRF730AL, SiHF730AL相关器件

型号 品牌 获取价格 描述 数据表
IRF730AS/LPBF INFINEON

获取价格

HEXFET Power MOSFET (SMPS MOSFET)
IRF730ASL INFINEON

获取价格

SMPS MOSFET
IRF730ASLPBF INFINEON

获取价格

HEXFET Power MOSFET (SMPS MOSFET)
IRF730ASPBF INFINEON

获取价格

HEXFET Power MOSFET (SMPS MOSFET)
IRF730ASPBF VISHAY

获取价格

Power MOSFET
IRF730ASTR NJSEMI

获取价格

Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) D2PAK T/R
IRF730ASTRL VISHAY

获取价格

Power MOSFET
IRF730ASTRLPBF VISHAY

获取价格

Power MOSFET
IRF730ASTRR ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | TO-263AB
IRF730ASTRRPBF VISHAY

获取价格

Power MOSFET