Datasheet > IRF730AS, SiHF730AS, IRF730AL, SiHF730AL

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL

更新时间： 2024-11-19 14:53:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	229K
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Power MOSFET

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IRF730AS, SiHF730AS, IRF730AL, SiHF730AL

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

D²PAK (TO-263)

I²PAK (TO-262)

• Low gate charge Q_gresults in simple drive

requirement

Available

• Improved gate, avalanche and dynamic dV/dt

ruggedness

Available

• Fully

characterized

capacitance

and

avalanche voltage and current

• Effective C_ossspecified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

Note

PRODUCT SUMMARY

V_DS(V)

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

400

1.0

R_DS(on)max. (Ω)

V_GS= 10 V

Q_gmax. (nC)

APPLICATIONS

_gs(nC)

_gd(nC)

5.8

9.3

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

Configuration

Single

TYPICAL SMPS TOPOLOGIES

• Single transistor flyback Xfmr. reset

• Single transistor forward Xfmr. reset (both US line input

only)

ORDERING INFORMATION

Package

D²PAK (TO-263)

I²PAK (TO-262)

Lead (Pb)-free and halogen-free

Lead (Pb)-free

SiHF730AS-GE3

IRF730ASPbF

SiHF730ASTRL-GE3 ^a

IRF730ASTRLPbF ^a

SiHF730ASTRR-GE3 ^a

SiHF730AL-GE3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

400

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

5.5

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

3.5

Pulsed drain current ^{a, e}

I_DM

Linear derating factor

0.6

W/°C

Single pulse avalanche energy ^{b, e}

Avalanche current ^a

E_AS

I_AR

290

5.5

Repetiitive avalanche energy ^a

E_AR

7.4

Maximum power dissipation

_C= 25 °C

for 10 s

P_D

Peak diode recovery dV/dt ^{c, e}

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

dV/dt

T_J, T_stg

4.6

V/ns

-55 to +150

300

°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting T_J= 25 °C, L = 19 mH, R_g= 25 Ω, I_AS= 5.5 A (see fig. 12)

c. I_SD≤ 5.5 A, dI/dt ≤ 90 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. Uses IRF730A, SiHF730A data and test conditions

S21-0901-Rev. D, 30-Aug-2021

Document Number: 91046

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与IRF730AS, SiHF730AS, IRF730AL, SiHF730AL相关器件

型号	品牌	获取价格	描述	数据表
IRF730AS/LPBF	INFINEON	获取价格	HEXFET Power MOSFET (SMPS MOSFET)
IRF730ASL	INFINEON	获取价格	SMPS MOSFET
IRF730ASLPBF	INFINEON	获取价格	HEXFET Power MOSFET (SMPS MOSFET)
IRF730ASPBF	INFINEON	获取价格	HEXFET Power MOSFET (SMPS MOSFET)
IRF730ASPBF	VISHAY	获取价格	Power MOSFET
IRF730ASTR	NJSEMI	获取价格	Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) D2PAK T/R
IRF730ASTRL	VISHAY	获取价格	Power MOSFET
IRF730ASTRLPBF	VISHAY	获取价格	Power MOSFET
IRF730ASTRR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 5.5A I(D) \| TO-263AB
IRF730ASTRRPBF	VISHAY	获取价格	Power MOSFET

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