IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
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Vishay Siliconix
Power MOSFET
D
FEATURES
D2PAK (TO-263)
I2PAK (TO-262)
• Low gate charge Qg results in simple drive
requirement
Available
• Improved gate, avalanche and dynamic dV/dt
ruggedness
G
G
D
S
D
S
Available
• Fully
characterized
capacitance
and
G
avalanche voltage and current
• Effective Coss specified
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
N-Channel MOSFET
Note
PRODUCT SUMMARY
VDS (V)
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
400
1.0
RDS(on) max. (Ω)
VGS = 10 V
Qg max. (nC)
22
APPLICATIONS
Q
gs (nC)
gd (nC)
5.8
Q
9.3
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
Configuration
Single
TYPICAL SMPS TOPOLOGIES
• Single transistor flyback Xfmr. reset
• Single transistor forward Xfmr. reset (both US line input
only)
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
Lead (Pb)-free and halogen-free
Lead (Pb)-free
SiHF730AS-GE3
IRF730ASPbF
SiHF730ASTRL-GE3 a
IRF730ASTRLPbF a
SiHF730ASTRR-GE3 a
SiHF730AL-GE3
-
-
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
400
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
30
T
C = 25 °C
5.5
Continuous drain current
VGS at 10 V
ID
TC = 100 °C
3.5
A
Pulsed drain current a, e
IDM
22
Linear derating factor
0.6
W/°C
mJ
A
Single pulse avalanche energy b, e
Avalanche current a
EAS
IAR
290
5.5
Repetiitive avalanche energy a
EAR
7.4
mJ
W
Maximum power dissipation
T
C = 25 °C
for 10 s
PD
74
Peak diode recovery dV/dt c, e
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
dV/dt
TJ, Tstg
4.6
V/ns
-55 to +150
300
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Starting TJ = 25 °C, L = 19 mH, Rg = 25 Ω, IAS = 5.5 A (see fig. 12)
c. ISD ≤ 5.5 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
e. Uses IRF730A, SiHF730A data and test conditions
S21-0901-Rev. D, 30-Aug-2021
Document Number: 91046
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000