Datasheet > IRF730B

IRF730B

更新时间： 2024-11-10 14:55:43

品牌	Logo	应用领域
威世 - VISHAY		局域网开关脉冲晶体管
页数	文件大小	规格书
7页	146K
描述
D Series Power MOSFET

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IRF730B 数据手册

IRF730B

Vishay Siliconix

www.vishay.com

D Series Power MOSFET

FEATURES

PRODUCT SUMMARY

• Optimal Design

450

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C ()

Q_gmax. (nC)

- Low Area Specific On-Resistance

- Low Input Capacitance (C_iss

V_GS= 10 V

1.0

)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (UIS)

• Optimal Efficiency and Operation

- Low Cost

_gs(nC)

_gd(nC)

Configuration

Single

TO-220AB

- Simple Gate Drive Circuitry

- Low Figure-of-Merit (FOM): R_onx Q_g

- Fast Switching

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

Exemptions may apply.

N-Channel MOSFET

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV)

• Server and Telecom Power Supplies

- SMPS

• Industrial

- Welding

- Induction Heating

• Motor Drives

• Battery Chargers

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRF730BPbF

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

400

Gate-Source Voltage

V_GS

Gate-Source Voltage AC (f > 1 Hz)

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

0.8

W/°C

E_AS

P_D

104

Maximum Power Dissipation

104

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt^d

T_J, T_stg

- 55 to + 150

°C

T_J= 125 °C

for 10 s

dV/dt

V/ns

°C

0.48

300^c

Soldering Recommendations (Peak Temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 2.3 mH, R_g= 25 , I_AS= 9.5 A.

c. 1.6 mm from case.

d. I_SD I_D, starting T_J= 25 °C.

S12-1392-Rev. A, 18-Jun-12

Document Number: 91518

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与IRF730B相关器件

型号	品牌	获取价格	描述	数据表
IRF730C	MOTOROLA	获取价格	Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRF730CF	NJSEMI	获取价格	Trans MOSFET N-CH 20V 5.2A 8-Pin SOIC T/R
IRF730CHIP	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 5.5A I(D) \| CHIP
IRF730D1	MOTOROLA	获取价格	4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF730F	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
IRF730F1	NJSEMI	获取价格	Trans MOSFET N-CH 20V 5.2A 8-Pin SOIC T/R
IRF730FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3.5A I(D) \| TO-220VAR
IRF730FX	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
IRF730L	MOTOROLA	获取价格	4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF730N	MOTOROLA	获取价格	Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal

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