Datasheet > IRF730B

IRF730B

更新时间： 2024-11-18 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
9页	3101K
描述
400V N-Channel MOSFET

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IRF730B 数据手册

IRF730B/IRFS730B

400V N-Channel MOSFET

www.kersemi.com

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies and

electronic lamp ballasts based on half bridge.

•

5.5A, 400V, R

= 1.0Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 25 nC)

Low Crss ( typical 20 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

TO-220

IRF Series

TO-220F

IRFS Series

D S

G D

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRF730B

IRFS730B

Units

Drain-Source Voltage

400

DSS

- Continuous (T = 25°C)

Drain Current

5.5

3.5

5.5 *

3.5 *

22 *

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

330

5.5

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

7.3

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.58

0.3

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

IRF730B

IRFS730B

3.31

Units

°C/W

Thermal Resistance, Junction-to-Case Max.

Thermal Resistance, Case-to-Sink Typ.

1.71

0.5

θJC

θCS

Thermal Resistance, Junction-to-Ambient Max.

62.5

θJA

12 3 4 5 6 7...9

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与IRF730B相关器件

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IRF730C	MOTOROLA	获取价格	Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRF730CF	NJSEMI	获取价格	Trans MOSFET N-CH 20V 5.2A 8-Pin SOIC T/R
IRF730CHIP	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 5.5A I(D) \| CHIP
IRF730D1	MOTOROLA	获取价格	4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF730F	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
IRF730F1	NJSEMI	获取价格	Trans MOSFET N-CH 20V 5.2A 8-Pin SOIC T/R
IRF730FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3.5A I(D) \| TO-220VAR
IRF730FX	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
IRF730L	MOTOROLA	获取价格	4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF730N	MOTOROLA	获取价格	Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal