Datasheet > IRF730S (KRF730S)

IRF730S (KRF730S)

更新时间： 2024-11-19 18:09:23

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描述
N-Channel MOSFET

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IRF730S (KRF730S) 数据手册

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SMD Type

MOSFET

N-Channel MOSFET

IRF730S (KRF730S)

■ Features

● VDS (V) =400V

● ID = 5.5 A (VGS = 10V)

● R^DS(ON)＜ 1Ω (VGS = 10V)

● Fast switching

● Low thermal resistance

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

400

±20

5.5

Unit

Gate-Source Voltage

Tc = 25℃

Continuous Drain Current

3.5

Tc = 100℃

Pulsed Drain Current

Avalanche Current

5.5

Tc = 25℃

Ta = 25℃

Power Dissipation

3.1

Non-Repetitive Avalanche Energy

(Note.1)

290

7.4

Repetitive Avalanche Energy (Note.2)

Peak Diode Recovery dv/dt

dv/dt

V/ns

Thermal Resistance.Junction- to-Ambient

thJA

Thermal Resistance.Junction- to-Ambient (PCB mount)

Thermal Resistance Junction to Mounting Base

Junction Temperature

℃/W

RthJB

1.7

150

-55 to 150

℃

Storage Temperature Range

stg

Note.1: VDD= 50V, starting T

=25°C, L=16mH, Rg =25Ω, IAS = 5.5 A

≤ 150 °C.

Note.2: I^SD≤5.5 A, dI/dt≤ 90A/μs, VDD≤ V(BR)DSS, T

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