IRF730STRRPBF

更新时间： 2024-11-18 13:00:55

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
8页	103K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF730STRRPBF 数据手册

PD - 91902A

SMPS MOSFET

V_DSS

IRF730A

HEXFET^®Power MOSFET

Applications

Rds(on) max

I_D

l Switch Mode Power Supply (SMPS)

l Uninterruptable Power Supply

l High speed power switching

400V

1.0Ω

5.5A

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

G D S

TO-220AB

l Effective Coss Specified (See AN1001)

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.5

3.5

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.6

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

4.6

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Typical SMPS Topologies:

l Single Transistor Flyback Xfmr. Reset

l Single Transistor Forward Xfmr. Reset

(Both US Line input only).

www.irf.com

5/8/00

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF730STRRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF730U2	MOTOROLA	获取价格	Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRF730UA	MOTOROLA	获取价格	Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRF730WC	MOTOROLA	获取价格	4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF731	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 5.5A, 350 V/400V
IRF731	SAMSUNG	获取价格	Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRF731	NJSEMI	获取价格	Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC
IRF731-001	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRF731-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRF731-002PBF	INFINEON	获取价格	5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET
IRF731-003	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal