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IRF7311TR PDF预览

IRF7311TR

更新时间: 2024-10-02 12:02:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 214K
描述
Generation V Technology

IRF7311TR 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SO-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.71
其他特性:AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级(Eas):100 mJ
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):6.6 A最大漏源导通电阻:0.029 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:2元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):26 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7311TR 数据手册

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PD - 91435C  
IRF7311  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l Dual N-Channel MOSFET  
l Surface Mount  
1
2
8
D1  
S1  
G 1  
VDSS = 20V  
7
D 1  
3
4
6
S2  
D2  
l Fully Avalanche Rated  
5
G 2  
D 2  
RDS(on) = 0.029Ω  
Top View  
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devices can be used in an application with dramatically  
reduced board space. The package is designed for  
vapor phase, infra red, or wave soldering techniques.  
S O -8  
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
20  
± 12  
6.6  
V
VGS  
TA = 25°C  
TA = 70°C  
Continuous Drain Current  
ID  
5.3  
26  
A
Pulsed Drain Current  
IDM  
IS  
Continuous Source Current (Diode Conduction)  
2.5  
TA = 25°C  
TA = 70°C  
2.0  
Maximum Power Dissipation ꢀ  
P
D
W
1.3  
Single Pulse Avalanche Energy ‚  
Avalanche Current  
EAS  
IAR  
100  
mJ  
A
4.1  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Junction and Storage Temperature Range  
EAR  
0.20  
5.0  
mJ  
V/ ns  
°C  
dv/dt  
TJ,TSTG  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Symbol  
Limit  
Units  
Maximum Junction-to-Ambientꢀ  
RθJA  
62.5  
°C/W  
5/29/01  

IRF7311TR 替代型号

型号 品牌 替代类型 描述 数据表
IRF7311TRPBF INFINEON

完全替代

Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Me
IRF7301TRPBF INFINEON

类似代替

Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Met
IRF7301PBF INFINEON

类似代替

HEXFET Power MOSFET

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