Datasheet > IRF7313TRPBF-1

IRF7313TRPBF-1

更新时间： 2024-09-28 14:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	204K
描述
Power Field-Effect Transistor

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中文翻译

获取价格

数据手册
替代型号

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IRF7313TRPBF-1 数据手册

IRF7313PbF-1

HEXFET^®Power MOSFET

V_DS

0.029

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

I_D

6.5

SO-8

(@T_A= 25°C)

Top View

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Tube/Bulk

Base Part Number

Package Type

Orderable Part Number

Quantity

4000

IRF7313PbF-1

IRF7313TRPbF-1

IRF7313PbF-1

SO-8

Tape and Reel

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Symbol

V_DS

V_GS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

± 20

6.5

T_A= 25°C

T_A= 70°C

Continuous Drain Currentꢀ

I_D

5.2

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

I_DM

I_S

2.5

T_A= 25°C

T_A= 70°C

2.0

1.3

Maximum Power Dissipation ꢀ

P_D

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

4.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

0.20

5.8

V/ ns

°C

dv/dt

T_J,T_STG

-55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambientꢀ

R_θJA

62.5

°C/W

November 14, 2013

12 3 4 5 6 7

中文翻译

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IRF7313TRPBF-1 替代型号

型号	品牌	替代类型	描述	数据表
IRF7313PBF-1	INFINEON	类似代替	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF7313TRPBF	INFINEON	类似代替	Generation V Technology
IRF7313PBF	INFINEON	功能相似	HEXFET Power MOSFET

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