Datasheet > IRF7316S

IRF7316S

更新时间： 2024-09-27 23:58:51

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数据手册

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IRF7316S 数据手册

PD - 9.1505A

IRF7316

PRELIMINARY

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual P-Channel MOSFET

l Surface Mount

D 1

V_DSS= -30V

G 1

D 1

D 2

l Fully Avalanche Rated

G 2

D 2

_DS(on)= 0.058Ω

Top View

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

SO-8

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

-30

V_GS

± 20

-4.9

T_A= 25°C

T_A= 70°C

Continuous Drain Currentꢀ

I_D

-3.9

Pulsed Drain Current

I_DM

I_S

-30

Continuous Source Current (Diode Conduction)

-2.5

T_A= 25°C

T_A= 70°C

2.0

Maximum Power Dissipation ꢀ

P_D

1.3

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

140

-2.8

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

0.20

-2.2

dv/dt

T_J,T_STG

V/ ns

-55 to + 150

°C

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambientꢀ

R_θJA

62.5

°C/W

2/24/97

12 3 4 5 6 7

中文翻译

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