Datasheet > IRF7316TR

IRF7316TR

更新时间： 2024-09-29 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	389K
描述
种类:P+P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-4.9A;Vgs(th)(V):±20;漏源导通电阻:58mΩ@-10V

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IRF7316TR 数据手册

UMW

IRF7316

Dual

P-Channel MOSFET

Features

VDS (V) = -30V

58m

98m

(VGS

-10V)

RDS(ON)

-4.5V)

RDS(ON)

GenerationVTechnology

Ultra Low On-Resistance

Surface Mount

Fully Avalanche Rated

Lead-Free

Top View

Description

The SOP-8 has been modified through a customized

eadrame for enhanced thermacharacterstics and

multiple die capability making it ideal in a variety of

power applications.With these improvements.multiple

devices can be used in an application with

dramatically reduced board space. The packageis

desianed forn vapor phase. infra red, or wave

soldering technigues

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_A= 25°C

T_A= 70°C

-4.9

-3.9

-30

-2.5

Continuous Drain Current

ꢀ

I_D

Pulsed Drain Current

I_DM

I_S

Continuous Source Current (Diode Conduction)

T_A= 25°C

T_A= 70°C

2.0

1.3

Maximum Power Dissipation

ꢀ

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

140

-2.8

Repetitive Avalanche Energy

E_AR

0.20

V/ ns

°C

Peak Diode Recovery dv/dt

dv/dt

T_J,T_STG

-5.0

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambient

ꢀ

R_θJA

62.5

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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