Datasheet > IRF7319TR

IRF7319TR

更新时间： 2024-11-20 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
10页	428K
描述
种类:N+P-Channel;漏源电压（Vdss）:N：30V; P：-30V;持续漏极电流（Id）（在25°C时）:-4.9A;Vgs(th)(V):±20;漏源导通电阻:N:31mΩ; P: 60mΩ@10V

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IRF7319TR 数据手册

UMW

IRF7319

P Channel MOSFET

Dual N+

Features

N-Ch:

VDS (V) = 30V

31m

48m

(VGS

10V)

RDS(ON)

N-CHANNEL MOSFET

4.5V)

P-Ch:

VDS (V) = -30V

60m

(VGS

10V)

RDS(ON)

100m

(VGS = -4.5V)

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Surface Mount

P-CHANNEL MOSFET

Top View

Fully Avalanche Rated

Lead-Free

Description

The SOP-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements.

multiple devices can be used in an application with

dramatically reducea board space. The package is

designed for vapor phase, infra red, or wave

soldering technigues.

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Symbol

Maximum

Units

N-Channel

P-Channel

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-30

± 20

T_A= 25°C

T_A= 70°C

6.5

5.2

-4.9

-3.9

-30

Continuous Drain Currentꢀ

I_D

Pulsed Drain Current

I_DM

I_S

Continuous Source Current (Diode Conduction)

2.5

-2.5

T_A= 25°C

T_A= 70°C

2.0

1.3

Maximum Power Dissipation ꢀ

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

140

-2.8

4.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

0.20

dv/dt

T_J,T_STG

5.0

-5.0

V/ ns

-55 to + 150 °C

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambient ꢀ

R_θJA

62.5

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...10

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