Datasheet > IRF7317PBF_15

IRF7317PBF_15

更新时间： 2024-01-31 06:20:30

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	241K
描述
GENERATION V TECHNOLOGY

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IRF7317PBF_15 数据手册

PD - 95296

IRF7317PbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Surface Mount

l Fully Avalanche Rated

l Lead-Free

N-CHANNEL MOSFET

N-Ch P-Ch

V_DSS20V

-20V

P-CHANNEL MOSFET

R_DS(on)0.029Ω 0.058Ω

Description

Top View

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements,

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave soldering

techniques.

SO-8

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Symbol

Maximum

Units

N-Channel

P-Channel

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-20

± 12

T_A= 25°C

T_A= 70°C

6.6

5.3

-5.3

-4.3

-21

Continuous Drain Currentꢀ

Pulsed Drain Current

I_DM

I_S

Continuous Source Current (Diode Conduction)

2.5

-2.5

T_A= 25°C

T_A= 70°C

2.0

1.3

Maximum Power Dissipation ꢀ

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

100

4.1

150

-2.9

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

0.20

dv/dt

T_J,T_STG

5.0

-5.0

V/ ns

-55 to + 150 °C

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambient ꢀ

R_θJA

62.5

°C/W

5/25/04

12 3 4 5 6 7...10

中文翻译

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