IRF7322D1

更新时间： 2024-11-23 04:44:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体肖特基二极管晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	174K
描述
MOSFET Schottky Diode ( VDSS = -20V , RDS(on) = 0.058W , Schottky Vf = 0.39V )

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IRF7322D1 数据手册

PD- 91705A

IRF7322D1

FETKY MOSFET / Schottky Diode

● Co-packaged HEXFET^®Power MOSFET

and Schottky Diode

● Ideal For Buck Regulator Applications

● P-Channel HEXFET

● Low V_FSchottky Rectifier

● Generation 5 Technology

● SO-8 Footprint

V_DSS= -20V

_DS(on)= 0.058Ω

Schottky Vf = 0.39V

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Description

The FETKY family of co-packaged MOSFETs and Schottky diodes offers the

designer an innovative, board space saving solution for switching regulator

and power management applications. Generation 5 HEXFET Power

MOSFETs utilize advanced processing techniques to achieve extremely low

on-resistance per silicon area. Combinining this technology with

International Rectifier's low forward drop Schottky rectifiers results in an

extremely efficient device suitable for use in a wide variety of portable

electronics applications.

S O -8

The SO-8 has been modified through a customized leadframe for

enhanced thermal characteristics. The SO-8 package is designed for vapor

phase, infrared or wave soldering techniques.

Absolute Maximum Ratings (T_A= 25°C unless otherwise noted)

Parameter

Maximum

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

-5.3

-4.3

Pulsed Drain Current ➀

-43

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.0

1.3

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

± 12

dv/dt

Peak Diode Recovery dv/dt ➁

Junction and Storage Temperature Range

-5.0

V/ns

°C

T_J,T_STG

-55 to +150

Thermal Resistance Ratings

Parameter

Maximum

Units

R_θJA

Junction-to-Ambient ➃

62.5

°C/W

Notes:

➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)

➁ I_SD≤ -2.9A, di/dt ≤ -77A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

➂ Pulse width ≤ 300µs; duty cycle ≤ 2%

➃ Surface mounted on FR-4 board, t ≤ 10sec.

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