IRF7328

更新时间： 2024-11-17 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	109K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IRF7328 数据手册

PD -94000

IRF7328

HEXFET^®Power MOSFET

●

Trench Technology

V_DSS

-30V

R_DS(on)max

21mΩ@V_GS= -10V

32mΩ@V_GS= -4.5V

I_D

-8.0A

Ultra Low On-Resistance

Dual P-Channel MOSFET

Available in Tape & Reel

-6.8A

Description

New trench HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in battery and load management applications.

G 1

D 1

G 2

D 2

SO-8

Top V iew

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Max.

-30

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-8.0

-6.4

-32

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.0

1.3

mW/°C

V_GS

Gate-to-Source Voltage

± 20

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

62.5

°C/W

www.irf.com

10/04/00

12 3 4 5 6 7 8

中文翻译

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IRF7328 替代型号

型号	品牌	替代类型	描述	数据表
IRF7328TRPBF	INFINEON	类似代替	Trench Technology
IRF7328PBF	INFINEON	类似代替	HEXFET㈢ Power MOSFET
BSO303P	INFINEON	类似代替	OptiMOS -P Small-Signal-Transistor

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IRF7328TRPBF	INFINEON	获取价格	Trench Technology
IRF7329	INFINEON	获取价格	HEXFET POWER MOSFET
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IRF7329TRPBF	INFINEON	获取价格	Trench Technology
IRF732FI	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3A I(D) \| TO-220AB
IRF732R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 4.5A I(D) \| TO-220AB
IRF733	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 5.5A, 350 V/400V