BSO303P

更新时间： 2024-11-17 22:27:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	86K
描述
OptiMOS -P Small-Signal-Transistor

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中文翻译

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数据手册
替代型号

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BSO303P 数据手册

Preliminary data

BSO303P

OptiMOS -P Small-Signal-Transistor

Product Summary

Feature

-30

• Dual P-Channel

• Enhancement mode

• Logic Level

mΩ

DS(on)

-8.2

• 150°C operating temperature

• Avalanche rated

• dv/dt rated

Top View

SIS00070

Type

Package

Ordering Code

BSO303P

SO 8

Q67042-S4010

Maximum Ratings,at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

-8.2

-6.6

T =70°C

-32.4

Pulsed drain current

D puls

T =25°C

-6

Avalanche energy, single pulse

I =-8.2 A , V =-25V, R =25Ω

kV/µs

Reverse diode dv/dt

dv/dt

I =-8.2A, V =-24V, di/dt=200A/µs, T

DS jmax

=150°C

Gate source voltage

Power dissipation

±20

tot

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +150

55/150/56

stg

Page 1

2002-01-08

12 3 4 5 6 7 8

中文翻译

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BSO303P 替代型号

型号	品牌	替代类型	描述	数据表
IRF7328	INFINEON	类似代替	HEXFET Power MOSFET
IRF7328TRPBF	INFINEON	功能相似	Trench Technology
IRF7328PBF	INFINEON	功能相似	HEXFET㈢ Power MOSFET

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