Datasheet > BSO613SPV G

BSO613SPV G

更新时间： 2024-11-22 11:15:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	224K
描述
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

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BSO613SPV G 数据手册

BSO613SPV G

SIPMOS Power-Transistor

Features

Product Summary

P-Channel

Drain source voltage

-60

0.13

-3.44

Enhancement mode

Avalanche rated

dv/dt rated

Drain-source on-state resistance R

DS(on)

Continuous drain current

° Qualified according to AEC Q101

° Halogenfree according to IEC61249221

Top View

SIS00062

Type

Package

Lead free

BSO613SPV G

PG-SO 8

Yes

Maximum Ratings,at

= 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

= 25 °C

-3.44

Pulsed drain current

-13.8

150

D puls

T = 25 °C

Avalanche energy, single pulse

I = -3.44 A , V = -25 V, R = 25

Avalanche energy, periodic limited by

Reverse diode d /d

= -3.44 A, = -48 V, di/dt = 200 A/µs,

0.25

jmax

v/d

kV/µs

= 150 °C

jmax

Gate source voltage

Power dissipation

±20

2.5

tot

T = 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +150

55/150/56

°C

stg

Rev.2.0

Page 1

20190730

12 3 4 5 6 7...9

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