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BSO615NV PDF预览

BSO615NV

更新时间: 2024-02-11 21:29:38
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管光电二极管
页数 文件大小 规格书
8页 110K
描述
SIPMOS Small-Signal-Transistor

BSO615NV 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.67
雪崩能效等级(Eas):60 mJ配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):3.1 A
最大漏极电流 (ID):3.1 A最大漏源导通电阻:0.12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e0元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):12.4 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BSO615NV 数据手册

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Preliminary Data  
BSO 615NV  
SIPMOS Small-Signal-Transistor  
Features  
Product Summary  
Drain source voltage  
60  
0.12  
3.1  
V
V
Dual N Channel  
DS  
Drain-Source on-state resistance  
Continuous drain current  
Enhancement mode  
R
I
DS(on)  
A
Avalanche rated  
dv/dt rated  
D
Type  
Package  
Ordering Code  
BSO 615NV  
SO 8  
Q67041-S2844  
Maximum Ratings, at T = 25 ˚C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
3.1  
A
Continuous drain current, one channel active  
Pulsed drain current, one channel active  
I
D
12.4  
IDpulse  
T = 25 ˚C  
A
Avalanche energy, single pulse  
60  
mJ  
E
AS  
I = 3.1 A, V = 25 V, R = 25 Ω  
D
DD  
GS  
3.1  
0.2  
6
A
Avalanche current,periodic limited by T  
I
jmax  
AR  
mJ  
Avalanche energy, periodic limited by T  
Reverse diode dv/dt  
E
jmax  
AR  
kV/µs  
dv/dt  
I = 3.1 A, V = 20 V, di/dt = 200 A/µs,  
S
DS  
T
= 150 ˚C  
jmax  
Gate source voltage  
V
V
P
±20  
GS  
tot  
2
W
Power dissipation, one channel active  
T = 25 ˚C  
A
Operating temperature  
-55 ... +150  
-55 ... +150  
55/150/56  
˚C  
T
j
Storage temperature  
T
stg  
IEC climatic category; DIN IEC 68-1  
Data Sheet  
1
05.99  

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