BSO615NGXT

更新时间： 2024-01-05 07:11:32

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	158K
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数据手册

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BSO615NGXT 数据手册

Preliminary data

BSO 615 C

SIPMOS Small-Signal-Transistor

Features

Product Summary

Drain source voltage

Drain-Source on-state

resistance

-60

0.3

• Dual N- and P -Channel

• Enhancement mode

0.11

Ω

DS(on)

• Logic Level

Continuous drain current I

3.1

-2

• Avalanche rated

• dv/dt rated

Type

Package

Ordering Code

BSO 615 C

SO 8

Q67041-S4024

Maximum Ratings,at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

3.1

2.5

-2

T = 70 °C

-1.6

Pulsed drain current

12.4

-8

D puls

T = 25 °C

Avalanche energy, single pulse

I = 3.1 A , V = 25 V, R = 25 Ω

I = -2 A , V = -25 V, R = 25 Ω

Avalanche energy, periodic limited by T

0.2

jmax

Reverse diode dv/dt, T

= 150 °C

dv/dt

kV/µs

jmax

I = 3.1 A, V = 48 V, di/dt = 200 A/µs

I = -2 A, V = -48 V, di/dt = -200 A/µs

Gate source voltage

Power dissipation

±20

tot

T = 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55...+150

55/150/56

°C

stg

1999-10-28

Page 1

12 3 4 5 6 7...13

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