Datasheet > BSO9936

BSO9936

更新时间： 2024-01-19 23:03:11

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
9页	82K
描述
?Small Signal MOSFET. 30V. SO-8. RDSon = 75mOhm. 4.2A. LL. dual?

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BSO9936 数据手册

Preliminary data

BSO 307 N

SIPMOS Small-Signal-Transistor

Features

Product Summary

Drain source voltage

0.05

• Dual N channel

Drain-Source on-state resistance

Continuous drain current

Ω

• Enhancement mode

DS(on)

• Avalanche rated

• Logic Level

• dv/dt rated

Type

Package

Ordering Code

BSO 307 N

SO 8

Q67000-S4012

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current, one channel active

T = 25 °C

Pulsed drain current, one channel active

IDpulse

T = 25 °C

Avalanche energy, single pulse

I = 5 A, V = 25 V, R = 25 Ω

0.2

Avalanche current,periodic limited by T

jmax

Avalanche energy, periodic limited by T

jmax

kV/µs

Reverse diode dv/dt

dv/dt

I = 5 A, V = 24 V, di/dt = 200 A/µs,

= 150 °C

jmax

Gate source voltage

±20

tot

Power dissipation, one channel active

T = 25 °C

Operating temperature

-55...+150

-55 ... +150

55/150/56

°C

Storage temperature

stg

IEC climatic category; DIN IEC 68-1

Semiconductor Group

01 / 1999

12 3 4 5 6 7...9

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