是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.86 | Is Samacsys: | N |
其他特性: | LOGIC LEVAL | 雪崩能效等级(Eas): | 25 mJ |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 3.4 A | 最大漏极电流 (ID): | 3.4 A |
最大漏源导通电阻: | 0.11 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大功率耗散 (Abs): | 2 W |
最大脉冲漏极电流 (IDM): | 11.6 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSO330N02K | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met | |
BSO330N02KG | INFINEON |
获取价格 |
OptiMOSTM2 Power-Transistor | |
BSO350N03 | INFINEON |
获取价格 |
OptiMOS2 Power-Transistor | |
BSO350N03FUMA1 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-o | |
BSO4410 | INFINEON |
获取价格 |
OptiMOS Small-Signal-Transistor | |
BSO4420 | INFINEON |
获取价格 |
OptiMOS Small-Signal-Transistor | |
BSO4804 | INFINEON |
获取价格 |
OptiMOS Small-Signal-Transistor | |
BSO4804HUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal | |
BSO4822 | INFINEON |
获取价格 |
OptiMOS Small-Signal-Transistor | |
BSO4822HUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12.7A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Me |