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BSO304SN PDF预览

BSO304SN

更新时间: 2024-09-25 12:28:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 367K
描述
SIPMOS Small-Signal-Transistor

BSO304SN 数据手册

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Preliminary Data  
BSO 304SN  
SIPMOS Small-Signal-Transistor  
Product Summary  
Features  
Drain source voltage  
30  
0.03  
6.4  
V
V
Single N channel  
Enhancement mode  
Avalanche rated  
Logic Level  
DS  
Drain-Source on-state resistance  
Continuous drain current  
R
DS(on)  
A
I
D
dv/dt rated  
Type  
BSO 304 SN SO 8  
Maximum Ratings, at T = 25 ˚C, unless otherwise specified  
Package  
Ordering Code  
Q67000-S4012  
j
Parameter  
Symbol  
Value  
Unit  
Continuous drain current  
6.4  
A
I
D
T = 25 ˚C  
A
Pulsed drain current  
25.6  
90  
IDpulse  
T = 25 ˚C  
A
Avalanche energy, single pulse  
mJ  
E
AS  
I = 6.4 A, V = 25 V, R = 25  
D
DD  
GS  
6.4  
0.2  
6
A
Avalanche current,periodic limited by T  
I
jmax  
AR  
mJ  
Avalanche energy, periodic limited by T  
Reverse diode dv/dt  
E
jmax  
AR  
kV/µs  
dv/dt  
I = 6.4 A, V = 24 V, di/dt = 200 A/µs,  
S
DS  
T
= 150 ˚C  
jmax  
Gate source voltage  
Power dissipation  
V
V
P
20  
2
GS  
tot  
W
T = 25 ˚C  
A
Operating temperature  
-55 ... +150  
-55 ... +150  
55/150/56  
˚C  
T
j
Storage temperature  
T
stg  
IEC climatic category; DIN IEC 68-1  
Data Sheet  
1
05.99  

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