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BSO330N02K PDF预览

BSO330N02K

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲光电二极管晶体管
页数 文件大小 规格书
9页 338K
描述
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

BSO330N02K 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):19 mJ
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):4.2 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):26 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSO330N02K 数据手册

 浏览型号BSO330N02K的Datasheet PDF文件第2页浏览型号BSO330N02K的Datasheet PDF文件第3页浏览型号BSO330N02K的Datasheet PDF文件第4页浏览型号BSO330N02K的Datasheet PDF文件第5页浏览型号BSO330N02K的Datasheet PDF文件第6页浏览型号BSO330N02K的Datasheet PDF文件第7页 
BSO330N02K G  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
20  
30  
50  
6.5  
V
• For fast switching converters and sync. rectification  
• Qualified according to JEDEC1) for target applications  
R DS(on),max  
V
V
GS=4.5 V  
GS=2.5 V  
m  
• Super Logic level 2.5V rated; N-channel  
I D  
A
• Dual n-channel  
• Excellent gate charge x R DS(on) product (FOM)  
PG-DSO-8  
• Low on-resistance R DS(on)  
• Avalanche rated  
• Pb-free plating; RoHS compliant  
Type  
Package  
Marking  
BSO330N02K  
PG-DSO-8  
330N2K  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
10 secs steady state  
Parameter  
Symbol Conditions  
Unit  
V gs=4.5V, T C=25 °C2)  
I D  
Continuous drain current  
6.5  
5.2  
5.1  
4
5.4  
4.3  
4.2  
3.3  
A
A
V gs=4.5V, T C=70 °C2)  
V gs=2.5V, T C=25 °C2)  
V gs=2.5V, T C=70 °C2)  
T C=25 °C3)  
I D,pulse  
E AS  
26  
19  
Pulsed drain current  
I D=6.5 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=6.5 A, V DS=20 V,  
di /dt =200 A/µs,  
6
Reverse diode dv /dt  
dv /dt  
kV/µs  
T
j,max=150 °C  
V GS  
P tot  
±12  
Gate source voltage  
Power dissipation  
V
T A=25 °C2)  
T A=25 °C1)  
2.0  
1.4  
W
2.5  
T j, T stg  
-55 ... 150  
Operating and storage temperature  
ESD Class  
°C  
0 (0V to 250V)  
55/150/56  
IEC climatic category; DIN IEC 68-1  
Rev.1.01  
page 1  
2008-02-05  

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