Datasheet > IRF7328PBF_10

IRF7328PBF_10

更新时间： 2024-11-20 12:30:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	175K
描述
Trench Technology Ultra Low On-Resistance

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中文翻译

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数据手册

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IRF7328PBF_10 数据手册

PD - 95196A

IRF7328PbF

HEXFET^®Power MOSFET

Trench Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Available in Tape & Reel

Lead-Free

V_DSS

-30V

R_DS(on)max

21mΩ@V_GS= -10V

32mΩ@V_GS= -4.5V

I_D

-8.0A

-6.8A

Description

New trench HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in battery and load management applications.

SO-8

Top View

Absolute Maximum Ratings

Parameter

Max.

-30

Units

V_DS

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-8.0

-6.4

-32

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.0

1.3

mW/°C

V_GS

Gate-to-Source Voltage

± 20

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

62.5

Units

°C/W

R_θJA

www.irf.com

12/03/10

12 3 4 5 6 7 8

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