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IRF7331PBF PDF预览

IRF7331PBF

更新时间: 2024-09-24 22:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
9页 129K
描述
HEXFET Power MOSFET

IRF7331PBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:LEAD FREE, SO-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.12
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):7 A
最大漏极电流 (ID):7 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7331PBF 数据手册

 浏览型号IRF7331PBF的Datasheet PDF文件第2页浏览型号IRF7331PBF的Datasheet PDF文件第3页浏览型号IRF7331PBF的Datasheet PDF文件第4页浏览型号IRF7331PBF的Datasheet PDF文件第5页浏览型号IRF7331PBF的Datasheet PDF文件第6页浏览型号IRF7331PBF的Datasheet PDF文件第7页 
PD - 95266  
IRF7331PbF  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l Dual N-Channel MOSFET  
l Surface Mount  
l Available in Tape & Reel  
l Lead-Free  
VDSS  
20V  
RDS(on) max (mW)  
30@VGS = 4.5V  
ID  
7.0A  
45@VGS = 2.5V  
5.6A  
Description  
1
8
S1  
D1  
These N-Channel HEXFET® power MOSFETs from  
International Rectifier utilize advanced processing  
techniquestoachievetheextremelylowon-resistance  
per silicon area. This benefit provides the designer  
with an extremely efficient device for use in battery  
and load management applications.  
2
7
G1  
S2  
D1  
3
4
6
D2  
5
G2  
D2  
Top View  
SO-8  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devicescanbeusedinanapplicationwithdramatically  
reduced board space. The package is designed for  
vapor phase, infrared, or wave soldering techniques.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
20  
V
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current   
7.0  
5.5  
A
28  
2.0  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation ƒ  
Power Dissipationƒ  
W
1.3  
Linear Derating Factor  
16  
mW/°C  
VGS  
Gate-to-Source Voltage  
± 12  
V
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Symbol  
RθJL  
Parameter  
Junction-to-Drain Lead  
Typ.  
–––  
Max.  
20  
Units  
RθJA  
Junction-to-Ambient ƒ  
–––  
62.5  
°C/W  
www.irf.com  
1
05/18/04  

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