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IRF7324 PDF预览

IRF7324

更新时间: 2024-11-18 11:09:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 101K
描述
HEXFET? Power MOSFET

IRF7324 数据手册

 浏览型号IRF7324的Datasheet PDF文件第2页浏览型号IRF7324的Datasheet PDF文件第3页浏览型号IRF7324的Datasheet PDF文件第4页浏览型号IRF7324的Datasheet PDF文件第5页浏览型号IRF7324的Datasheet PDF文件第6页浏览型号IRF7324的Datasheet PDF文件第7页 
PD -93799A  
IRF7324  
HEXFET® Power MOSFET  
Trench Technology  
Ultra Low On-Resistance  
Dual P-Channel MOSFET  
Low Profile (<1.1mm)  
Available in Tape & Reel  
2.5V Rated  
1
2
8
S1  
G 1  
D1  
VDSS = -20V  
7
D 1  
3
4
6
S2  
D2  
5
G 2  
D 2  
RDS(on) = 0.018Ω  
Top V iew  
Description  
NewtrenchHEXFET® PowerMOSFETs fromInternational  
Rectifier utilize advanced processing techniques to  
achieve extremely low on-resistance per silicon area.  
Thisbenefit,combinedwiththeruggedized device design  
that HEXFET power MOSFETs are well known for,  
provides the designer with an extremely efficient and  
reliable device for use in battery and load management  
applications.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Drain-Source Voltage  
Max.  
-20  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current  
-9.0  
-7.1  
A
-71  
PD @TA = 25°C  
PD @TA = 70°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
2.0  
W
W
1.3  
16  
mW/°C  
V
VGS  
Gate-to-Source Voltage  
± 12  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambient ƒ  
62.5  
°C/W  
www.irf.com  
1
6/26/00  

IRF7324 替代型号

型号 品牌 替代类型 描述 数据表
IRF7324TRPBF INFINEON

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