Datasheet > IRF7321D2

IRF7321D2

更新时间： 2024-11-18 21:53:47

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
8页	155K
描述
FETKY MOSFET & Schottky Diode

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IRF7321D2 数据手册

PD- 91667D

IRF7321D2

FETKY^TMMOSFET & Schottky Diode

^lCo-packaged HEXFET® Power

MOSFET and Schottky Diode

l Ideal For Buck Regulator Applications

l P-Channel HEXFET®

l Low V_FSchottky Rectifier

l Generation 5 Technology

l SO-8 Footprint

V_DSS= -30V

R_DS(on)= 0.062Ω

Schottky Vf = 0.52V

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Description

The FETKY^TMfamily of Co-packaged HEXFETs and

Schottky diodes offer the designer an innovative board

space saving solution for switching regulator and

power management applications. Generation 5

HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

Combinining this technology with International

Rectifier's low forward drop Schottky rectifiers results in

an extremely efficient device suitable for use in a wide

variety of portable electronics applications.

SO-8

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics. The

SO-8 package is designed for vapor phase, infrared or

wave soldering techniques.

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Parameter

Maximum

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

-4.7

-3.8

Pulsed Drain Current À

-38

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.0

1.3

Linear Derating Factor

mW/°C

V_GS

Gate-to-Source Voltage

± 20

dv/dt

Peak Diode Recovery dv/dt Á

Junction and Storage Temperature Range

-5.0

V/ns

°C

T_J,T_STG

-55 to +150

Thermal Resistance Ratings

Parameter

Junction-to-Ambient Ã

Maximum

Units

°C/W

R_θJA

62.5

Notes:

Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)

I_SD≤ -2.9A, di/dt ≤ -77A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

Pulse width ≤ 300µs – duty cycle ≤ 2%

Surface mounted on FR-4 board, t ≤ 10sec.

www.irf.com

10/15/04

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