是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.09 |
Is Samacsys: | N | 最大漏极电流 (Abs) (ID): | 4.9 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 湿度敏感等级: | 1 |
最高工作温度: | 150 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 2 W |
子类别: | Other Transistors | 表面贴装: | YES |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF7316PBF-1 | INFINEON |
功能相似 |
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | |
IRF7316TRPBF | INFINEON |
功能相似 |
Generation V Technology | |
IRF7316 | INFINEON |
功能相似 |
HEXFET POWER MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7317 | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF7317HR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channe | |
IRF7317PBF | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET | |
IRF7317PBF_15 | INFINEON |
获取价格 |
GENERATION V TECHNOLOGY | |
IRF7317TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channe | |
IRF7317TRPBF | INFINEON |
获取价格 |
Generation V Technology | |
IRF7319 | INFINEON |
获取价格 |
HEXFET?? Power MOSFET | |
IRF7319PBF | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET | |
IRF7319TR | INFINEON |
获取价格 |
暂无描述 | |
IRF7319TR | UMW |
获取价格 |
种类:N+P-Channel;漏源电压(Vdss):N:30V; P:-30V;持续漏极电 |