Datasheet > IRF7316PBF-1

IRF7316PBF-1

更新时间： 2024-02-24 21:34:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	206K
描述
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

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中文翻译

获取价格

技术参数
数据手册
替代型号

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IRF7316PBF-1 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8

IRF7316PBF-1 数据手册

IRF7316PbF-1

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= -10V)

Q_{g (typical)}

I_D

-30

0.058

-4.9

(@T_A= 25°C)

SO-8

Top View

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Tube/Bulk

Base Part Number

Package Type

Orderable Part Number

Quantity

4000

IRF7316PbF-1

IRF7316TRPbF-1

IRF7316PbF-1

SO-8

Tape and Reel

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-30

± 20

-4.9

-3.9

-30

-2.5

2.0

1.3

T_A= 25°C

T_A= 70°C

Continuous Drain Currentꢀ

I_D

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

I_DM

I_S

T_A= 25°C

T_A= 70°C

Maximum Power Dissipation ꢀ

P_D

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

140

-2.8

0.20

-5.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

V/ ns

°C

dv/dt

T_J,T_STG

-55 to + 150

Thermal Resistance Ratings

Parameter

Maximum Junction-to-Ambientꢀ

Symbol

R_θJA

Limit

62.5

Units

°C/W

November 14, 2013

12 3 4 5 6 7

中文翻译

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IRF7316PBF-1 替代型号

型号	品牌	替代类型	描述	数据表
IRF7316TRPBF-1	INFINEON	功能相似	Power Field-Effect Transistor
IRF7316TRPBF	INFINEON	功能相似	Generation V Technology
IRF7316	INFINEON	功能相似	HEXFET POWER MOSFET

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