Datasheet > IRF7314TR

IRF7314TR

更新时间： 2024-09-28 21:21:35

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲光电二极管晶体管
页数	文件大小	规格书
7页	151K
描述
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

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IRF7314TR 数据手册

PD - 9.1436B

IRF7314

PRELIMINARY

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual P-Channel MOSFET

l Surface Mount

V_DSS= -20V

l Fully Avalanche Rated

R_DS(on)= 0.058Ω

Top View

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

SO -8

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

-20

V_GS

± 12

T_A= 25°C

T_A= 70°C

-5.3

Continuous Drain Currentꢀ

I_D

-4.3

Pulsed Drain Current

I_DM

I_S

-21

-2.5

Continuous Source Current (Diode Conduction)

T_A= 25°C

T_A= 70°C

2.0

Maximum Power Dissipation ꢀ

P_D

1.3

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

150

-2.9

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

0.20

dv/dt

T_J,T_STG

-5.0

V/ ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambientꢀ

R_θJA

62.5

°C/W

11/18/97

12 3 4 5 6 7

中文翻译

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