IRF7314QPBF

更新时间： 2024-09-28 12:53:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数	文件大小	规格书
9页	223K
描述
Advanced Process Technology

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数据手册

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IRF7314QPBF 数据手册

PD - 96107A

IRF7314QPbF

HEXFET^®Power MOSFET

Benefits

V_DSS

-20V

R_DS(on)max

0.058@V_GS= -4.5V

I_D

-5.2A

• Advanced Process Technology

• Dual P-Channel MOSFET

• Ultra Low On-Resistance

• 175°COperatingTemperature

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free

0.098@V_GS= -2.7V -4.42A

Description

These HEXFET ® Power MOSFET’s in a Dual SO-8

package utilize the lastest processing techniques to

achieve extremely low on-resistance per silicon area.

AdditionalfeaturesoftheseHEXFETPowerMOSFET’s

are a 175°C junction operating temperature, fast

switching speed and improved repetitive avalanche

rating. These benefits combine to make this design an

extremely efficient and reliable device for use in a

wide variety of applications.

SO-8

Top View

The 175°C rating for the SO-8 package provides

improved thermal performance with increased safe

operating area and dual MOSFET die capability make

it ideal in a variety of power applications. This dual,

surface mount SO-8 can dramatically reduce board

space and is also available in Tape & Reel.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Max.

-20

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-5.2

-4.3

-43

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

2.4

1.7

mW/°C

V_GS

Gate-to-Source Voltage

± 12

610

-5.2

E_AS

Single Pulse Avalanche Energy

Avalanche Current

I_AR

E_AR

Repetitive Avalanche Energy

Junction and Storage Temperature Range

See Fig.14, 15, 16

-55 to + 175

°C

T_J, T_STG

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

62.5

°C/W

www.irf.com

08/02/10

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