Datasheet > IRF7313TR

IRF7313TR

更新时间： 2024-10-15 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	381K
描述
种类:N+N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:6.5A;Vgs(th)(V):±20;漏源导通电阻:29mΩ@10V

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IRF7313TR 数据手册

UMW

IRF7313

Channel MOSFET

Dual N

Features

VDS (V)=30V

29m (VGS = 10V)

46 m (VGS = 4.5V)

RDS(ON)

Generation V Technology

Ultra Low On-Resistance

Surface Mount

Fully Avalanche Rated

Lead-Free

Top View

Description

The SOP-8 has been modified through a

customized eadframe for enhanced thermal

characteristics and multiple-die capability

making it ideal in a variety of powerapplications.

With theseimprovements.multiple devices can

be usedinanappication with dramatica v reduced

board space. The package is designed for vapor

phase, infra red, or wave sodering technigues.

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Symbol

V_DS

V_GS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

± 20

6.5

T_A= 25°C

T_A= 70°C

Continuous Drain Currentꢀ

I_D

5.2

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

I_DM

I_S

2.5

T_A= 25°C

T_A= 70°C

2.0

1.3

Maximum Power Dissipation ꢀ

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

4.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

0.20

5.8

V/ ns

°C

dv/dt

T_J,T_STG

-55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambientꢀ

R_θJA

62.5

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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