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IRF730S

更新时间： 2024-11-21 20:17:07
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 179K
描述
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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中文翻译

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IRF730S 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：D2PAK包装说明：SMALL OUTLINE, R-PSSO-G2
针数：4Reach Compliance Code：unknown
风险等级：5.03其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：290 mJ外壳连接：DRAIN
配置：SINGLE最小漏源击穿电压：400 V
最大漏极电流 (Abs) (ID)：5.5 A最大漏极电流 (ID)：5.5 A
最大漏源导通电阻：1 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：74 W最大脉冲漏极电流 (IDM)：22 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF730S 数据手册

 浏览型号IRF730S的Datasheet PDF文件第2页浏览型号IRF730S的Datasheet PDF文件第3页浏览型号IRF730S的Datasheet PDF文件第4页浏览型号IRF730S的Datasheet PDF文件第5页浏览型号IRF730S的Datasheet PDF文件第6页浏览型号IRF730S的Datasheet PDF文件第7页 
IRF730S, SiHF730S  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Halogen-free According to IEC 61249-2-21  
Definition  
• Surface Mount  
PRODUCT SUMMARY  
VDS (V)  
400  
R
DS(on) ()  
VGS = 10 V  
1.0  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
• Repetitive Avalanche Rated  
• Fast Switching  
Qg (Max.) (nC)  
38  
5.7  
Q
Q
gs (nC)  
gd (nC)  
22  
• Ease of Paralleling  
Configuration  
Single  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
D
DESCRIPTION  
D2PAK (TO-263)  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The D2PAK (TO-263) is a surface mount power package  
capable of accommodating die size up to HEX-4. It provides  
the highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK (TO-263) is suitable for high current applications  
because of its low internal connection resistance and can  
dissipate up to 2.0 W in a typical surface mount application.  
S
D
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and Halogen-free  
D2PAK (TO-263)  
D2PAK (TO-263)  
SiHF730STRL-GE3a  
IRF730STRLPbFa  
SiHF730STL-E3a  
SiHF730STL-E3a  
D2PAK (TO-263)  
SiHF730S-GE3  
IRF730SPbF  
SiHF730S-E3  
SiHF730S-E3  
SiHF730STRR-GE3a  
-
-
-
Lead (Pb)-free  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
Gate-Source Voltage  
SYMBOL  
LIMIT  
400  
20  
UNIT  
VDS  
VGS  
V
TC = 25 °C  
TC = 100 °C  
5.5  
3.5  
22  
Continuous Drain Current  
VGS at 10 V  
ID  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.59  
0.025  
290  
5.5  
7.4  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Avalanche Currenta  
EAS  
IAR  
EAR  
mJ  
A
mJ  
Repetitive Avalanche Energya  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TC = 25 °C  
TA = 25 °C  
74  
3.1  
4.0  
PD  
W
V/ns  
°C  
dV/dt  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 5.5 A (see fig. 12).  
c. ISD 5.5 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91048  
S11-1048-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

中文翻译

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IRF730S 替代型号

型号 品牌 替代类型 描述 数据表
IRF730SPBF VISHAY

完全替代

 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
2SK2525-01 FUJI

功能相似

 N-channel MOS-FET

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