Datasheet > IRF730S, SiHF730S

IRF730S, SiHF730S

更新时间： 2024-11-19 14:55:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	187K
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Power MOSFET

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IRF730S, SiHF730S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

• Available in tape and reel

• Dynamic dV/dt rating

SMD-220

Available

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

PRODUCT SUMMARY

V_DS(V)

400

DESCRIPTION

R_DS(on)(Ω)

V_GS= 10 V

1.0

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Q_gmax. (nC)

5.7

Q_gs(nC)

_gd(nC)

The D²PAK (TO-263) is a surface-mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

Configuration

Single

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF730S-GE3

IRF730SPbF

D²PAK (TO-263)

SiHF730STRL-GE3 ^a

IRF730STRLPbF ^a

D²PAK (TO-263)

SiHF730STRR-GE3 ^a

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

IRF730STRRPbF

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

400

V_GS

_C= 25 °C

5.5

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

3.5

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

0.59

0.025

290

W/°C

Linear Derating Factor (PCB mount) ^e

Single Pulse Avalanche Energy ^b

Avalanche Current ^a

E_AS

I_AR

5.5

Repetitive Avalanche Energy ^a

E_AR

7.4

Maximum Power Dissipation

Maximum Power Dissipation (PCB mount) ^e

Peak Diode Recovery dV/dt ^c

_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

3.1

dV/dt

4.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^d

T_J, T_stg

-55 to +150

300

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, starting T_J= 25 °C, L = 16 mH, R_g= 25 Ω, I_AS= 5.5 A (see fig. 12)

c. I_SD≤ 5.5 A, dI/dt ≤ 90 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0901-Rev. D, 30-Aug-2021

Document Number: 91048

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRF730S, SiHF730S相关器件

型号	品牌	获取价格	描述	数据表
IRF730SPBF	INFINEON	获取价格	HEXFET POWER MOSFET
IRF730SPBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRF730STRL	INFINEON	获取价格	暂无描述
IRF730STRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRF730STRR	VISHAY	获取价格	Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRF730STRRPBF	INFINEON	获取价格	暂无描述
IRF730U2	MOTOROLA	获取价格	Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRF730UA	MOTOROLA	获取价格	Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
IRF730WC	MOTOROLA	获取价格	4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF731	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 5.5A, 350 V/400V

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