Datasheet > IRF7307QPBF_10

IRF7307QPBF_10

更新时间： 2024-09-30 11:09:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	296K
描述
HEXFETPOWERMOSFET

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中文翻译

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数据手册

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IRF7307QPBF_10 数据手册

PD - 96106A

IRF7307QPbF

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

Dual N and P Channel MOSFET

SurfaceMount

Available in Tape & Reel

150°COperatingTemperature

Lead-Free

N-CHANNEL MOSFET

N-Ch P-Ch

V_DSS

20V

-20V

P-CHANNEL MOSFET

Top View

R_DS(on)0.050Ω 0.090Ω

Description

TheseHEXFET^®PowerMOSFET'sinaDualSO-

8packageutilizethelastestprocessingtechniques

toachieveextremelylow on-resistanceper silicon

area. AdditionalfeaturesoftheseHEXFETPower

MOSFET's are a 150°C junction operating

temperature, fast switching speed and improved

repetitiveavalancherating.Thesebenefitscombine

to make this design an extremely efficient and

reliable device for use in a wide variety of

applications.

The efficient SO-8 package provides enhanced

thermal characteristics and dual MOSFET die

capability making it ideal in a variety of power

applications. This dual, surface mount SO-8 can

dramatically reduce board space and is also

available in Tape & Reel.

SO-8

Absolute Maximum Ratings

Max.

Parameter

Units

N-Channel

P-Channel

4.5V

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10 Sec. Pulse Drain Current, V_GS

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

5.7-4.7

5.2

4.1

-4.3

-3.4

-17

P_D@T_A= 25°C

Power Dissipation

2.0

0.016

± 12

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

-5.0

V/ns

°C

T_J,T_STG

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

62.5

°C/W

www.irf.com

08/02/10

12 3 4 5 6 7...10

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