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IRF7309TR PDF预览

IRF7309TR

更新时间： 2024-11-17 13:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 164K
描述
Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

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IRF7309TR 数据手册

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PD - 9.1243B  
IRF7309  
PRELIMINARY  
HEXFET® Power MOSFET  
Generation V Technology  
Ultra Low On-Resistance  
Dual N and P Channel Mosfet  
Surface Mount  
Available in Tape & Reel  
Dynamic dv/dt Rating  
Fast Switching  
N-CHANNEL MOSFET  
1
N-Ch  
P-Ch  
8
D1  
D1  
S1  
2
3
4
7
6
5
G1  
S2  
G2  
VDSS  
30V  
-30V  
D2  
D2  
P-CHANNEL MOSFET  
RDS(on) 0.050Ω 0.10Ω  
Top View  
Description  
Fifth Generation HEXFETs from International Rectifier utilize advanced processing  
techniques to achieve the lowest possible on-resistance per silicon area. This  
benefit, combined with the fast switching speed and ruggedized device design for  
which HEXFET Power MOSFETs are well known, provides the designer with an  
extremely efficient device for use in a wide variety of applications.  
The SO-8 has been modified through a customized leadframe for enhanced  
thermal characteristics and multiple-die capability making it ideal in a variety of  
power applications. With these improvements, multiple devices can be used in an  
application with dramatically reduced board space. The package is designed for  
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater  
than 0.8W is possible in a typical PCB mount application.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
N-Channel  
P-Channel  
-3.5  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
10 Sec. Pulse Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
4.7  
4.0  
3.2  
16  
A
A
-3.0  
-2.4  
A
-12  
A
PD @TA = 25°C  
Power Dissipation (PCB Mount)**  
Linear Derating Factor (PCB Mount)**  
Gate-to-Source Voltage  
1.4  
0.011  
± 20  
W
W/°C  
V
VGS  
dv/dt  
Peak Diode Recovery dv/dt  
6.9  
-6.0  
V/ns  
°C  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Junction-to-Amb. (PCB Mount, steady state)**  
Min.  
––––  
Typ.  
––––  
Max.  
90  
Units  
°C/W  
RθJA  
** When mounted on 1" square PCB (FR-4 or G-10 Material).  
For recommended footprint and soldering techniques refer to application note #AN-994.  
147  
12345678

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