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IRF7303TR PDF预览

IRF7303TR

更新时间: 2024-10-15 17:15:55
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
8页 443K
描述
种类:N+N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时):5.3A;Vgs(th)(V):±20;漏源导通电阻:50mΩ@10V

IRF7303TR 数据手册

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R
IRF7303  
UMW  
Dual N-Channel MOSFET  
Features  
l
l
l
l
VDS (V) = 30V  
ID = 5.3 A  
1
2
8
RDS(ON)  
RDS(ON)  
50m (VGS = -10V)  
80m (VGS = -4.5V)  
D1  
S1  
7
G1  
D1  
l
l
Generation VTechnology  
Ultra Low On-Resistance  
Surface Mount  
3
4
6
S2  
D2  
l
5
Dynamic dv/dt Rating  
l
l
l
D2  
G2  
Fast Switching  
Lead-Free  
SOP-8  
Description  
The SOP-8 has been modied through a customizec  
leadframe for enhanced thermal characteristics and  
multiple die capability making it ideal in a variety of  
power applications.  
With these improvements. multiple devices can be  
used in an application with dramatically reduced board  
space.  
The package is designed for vapor phase. intra red. or  
wave soldering techniques. Power dissipation of gre-  
ater than 0.8W is possible in a typical PCB mount app-  
lication.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
10 Sec. Pulsed Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
5.3  
4.9  
A
3.9  
20  
PD @TA = 25°C  
Power Dissipation  
2.0  
W
W/°C  
V
Linear Derating Factor  
0.016  
± 20  
5.0  
VGS  
Gate-to-Source Voltage  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
V/ns  
°C  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambient„  
62.5  
°C/W  
www.umw-ic.com  
1
UTD Semiconductor Co.,Limited  

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种类:P+P-Channel;漏源电压(Vdss):-20V;持续漏极电流(Id)(在25