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AUIRF7103Q PDF预览

AUIRF7103Q

更新时间： 2024-09-17 12:42:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
13页 230K
描述
Advanced Planar Technology Dual N Channel MOSFET

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中文翻译

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AUIRF7103Q 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.17
Is Samacsys：N其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：22 mJ配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：50 V最大漏极电流 (ID)：3 A
最大漏源导通电阻：0.13 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：MS-012AAJESD-30 代码：R-PDSO-G8
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：25 A认证状态：Not Qualified
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF7103Q 数据手册

 浏览型号AUIRF7103Q的Datasheet PDF文件第2页浏览型号AUIRF7103Q的Datasheet PDF文件第3页浏览型号AUIRF7103Q的Datasheet PDF文件第4页浏览型号AUIRF7103Q的Datasheet PDF文件第5页浏览型号AUIRF7103Q的Datasheet PDF文件第6页浏览型号AUIRF7103Q的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRF7103Q  
HEXFET® Power MOSFET  
Features  
l AdvancedPlanarTechnology  
l Dual N Channel MOSFET  
l LowOn-Resistance  
l Dynamic dV/dT Rating  
l 175°COperatingTemperature  
l Fast Switching  
1
2
3
4
8
7
S1  
G1  
S2  
D1  
D1  
D2  
D2  
V(BR)DSS  
DS(on) max.  
ID  
50V  
130m  
3.0A  
6
5
R
G2  
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
Top View  
Description  
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit com-  
bined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are  
well known for, provides the designer with an ex-  
tremely efficient and reliable device for use in Auto-  
motive and a wide variety of other applications.  
SO-8  
AUIRF7103Q  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 4.5V  
Max.  
3.0  
Units  
A
I
I
I
@ TA = 25°C  
@ TA = 70°C  
D
D
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current  
2.5  
25  
DM  
Power Dissipation  
P
@TA = 25°C  
2.4  
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
16  
± 20  
W/°C  
V
VGS  
EAS  
IAR  
Single Pulse Avalanche Energy (Thermally Limited)  
22  
mJ  
A
Avalanche Current  
See Fig. 16c, 16d, 19, 20  
Repetitive Avalanche Energy  
EAR  
mJ  
dv/dt  
Peak Diode Recovery dv/dt  
Operating Junction and  
12  
V/ns  
°C  
T
-55 to + 175  
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
RJL  
RJA  
–––  
62.5  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
December 5, 2012  
1234567...13

中文翻译

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AUIRF7103Q 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF7103QTR INFINEON

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 Advanced Planar Technology Dual N Channel MOSFET
IRF7103TRPBF INFINEON

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 adavanced process technology
IRF7103PBF INFINEON

类似代替

 HEXFET Power MOSFET

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