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AUIRF7207Q PDF预览

AUIRF7207Q

更新时间： 2024-11-07 14:40:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网PC开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 386K
描述
Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8

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AUIRF7207Q 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：SOP-8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.21Is Samacsys：N
其他特性：AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级（Eas）：140 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：5.4 A最大漏源导通电阻：0.06 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MS-012AA
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：43 A
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF7207Q 数据手册

 浏览型号AUIRF7207Q的Datasheet PDF文件第2页浏览型号AUIRF7207Q的Datasheet PDF文件第3页浏览型号AUIRF7207Q的Datasheet PDF文件第4页浏览型号AUIRF7207Q的Datasheet PDF文件第5页浏览型号AUIRF7207Q的Datasheet PDF文件第6页浏览型号AUIRF7207Q的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRF7207Q  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
Low On-Resistance  
VDSS  
-20V  
Logic Level Gate Drive  
P-Channel MOSFET  
Dynamic dV/dT Rating  
150°C Operating Temperature  
Fast Switching  
RDS(on) max  
ID  
0.06  
-5.4A  
Fully Avalanche Rated  
Lead-Free, RoHS Compliant  
Automotive Qualified*  
Description  
SO-8  
Specifically designed for Automotive applications, this cellular design  
of HEXFET® Power MOSFETs utilizes the latest processing  
techniques to achieve low on-resistance per silicon area. This benefit  
combined with the fast switching speed and ruggedized device  
design that HEXFET power MOSFETs are well known for, provides  
the designer with an extremely efficient and reliable device for use in  
Automotive and a wide variety of other applications.  
Standard Pack  
Base part number  
Package Type  
Orderable Part Number  
Form  
Quantity  
AUIRF7207Q  
SO-8  
Tape and Reel  
2500  
AUIRF7207QTR  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Drain-to-Source Voltage  
Max.  
-20  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current   
-5.4  
-4.3  
A
-43  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
2.5  
W
Power Dissipation  
1.6  
Linear Derating Factor  
0.02  
± 12  
W/°C  
V
VGS  
VGSM  
EAS  
TJ  
Gate-to-Source Voltage  
V
Gate-to-Source Voltage Single Pulse tp<10µs  
Single Pulse Avalanche Energy (Thermally Limited)   
Operating Junction and  
-16  
mJ  
140  
-55 to + 150  
°C  
TSTG  
Storage Temperature Range  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
Units  
Junction-to-Ambient   
50  
RJA  
°C/W  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-11-16  
12345678

中文翻译

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AUIRF7207Q 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF7207QTR INFINEON

完全替代

 Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Met

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