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AUIRF6218STRR PDF预览

AUIRF6218STRR

更新时间： 2024-11-09 13:05:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
12页 234K
描述
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

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中文翻译

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AUIRF6218STRR 数据手册

 浏览型号AUIRF6218STRR的Datasheet PDF文件第2页浏览型号AUIRF6218STRR的Datasheet PDF文件第3页浏览型号AUIRF6218STRR的Datasheet PDF文件第4页浏览型号AUIRF6218STRR的Datasheet PDF文件第5页浏览型号AUIRF6218STRR的Datasheet PDF文件第6页浏览型号AUIRF6218STRR的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRF6218S  
AUIRF6218L  
Features  
HEXFET® Power MOSFET  
l AdvancedPlanarTechnology  
l LowOn-Resistance  
l P-Channel  
D
V(BR)DSS  
RDS(on) max  
-150V  
150m  
-27A  
l
Dynamic dV/dT Rating  
l 175°COperatingTemperature  
l Fast Switching  
G
ID  
S
l
Fully Avalanche Rated  
l Repetitive Avalanche Allowed up to  
Tjmax  
l Lead-Free,RoHSCompliant  
l Automotive Qualified *  
D
D
Description  
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit  
combined with the fast switching speed and rugge-  
dized device design that HEXFET power MOSFETs  
are well known for, provides the designer with an  
extremely efficient and reliable device for use in  
Automotive and a wide variety of other applications.  
S
D
S
D
G
D2Pak  
G
TO-262  
AUIRF6218L  
AUIRF6218S  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Drain-to-Source Voltage  
Max.  
-150  
± 20  
-27  
Units  
V
VDS  
VGS  
Gate-to-Source Voltage  
I
I
I
@ T = 25°C  
A
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
D
D
C
@ T = 100°C  
C
-19  
-110  
250  
DM  
P
@T = 25°C Maximum Power Dissipation  
W
D
C
Linear Derating Factor  
1.6  
W/°C  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
EAS  
IAR  
210  
-16  
mJ  
A
dv/dt  
Peak Diode Recovery dv/dt  
Operating Junction and  
8.2  
V/ns  
°C  
T
-55 to + 175  
J
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds (1.6mm from cas  
Mounting torque, 6-32 or M3 screw  
300  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
Max.  
0.61  
40  
Units  
R  
R  
Junction-to-Case  
Junction-to-Ambient  
–––  
–––  
°C/W  
JC  
JA  
(P CB M ounted, s teady s tate)  
www.irf.com  
1
08/20/2012  
1234567...12

中文翻译

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AUIRF6218STRR 替代型号

型号 品牌 替代类型 描述 数据表
IRF6218SPBF INFINEON

完全替代

 暂无描述
AUIRF6218S INFINEON

完全替代

 Advanced Planar Technology
AUIRF6218STRL INFINEON

类似代替

 Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Met

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